BF421 SIEMENS | Alldatasheet

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Technical content

PNP Silicon Transistors BF 421 With High Reverse Voltage BF 423 5.91 Maximum Ratings Type Ordering CodeMarking Package 1)Pin Configuration BF 421 BF 423 Q62702-F532 Q62702-F496 – TO-92 1 2 3 E C B 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm× 25 mm × 0.5 mm. Parameter Symbol Values Unit Collector-emitter voltage VCE0 V Collector current IC mA Junction temperature Tj ˚C Total power dissipation,TC = 88 ˚CPtot mW Storage temperature range Tstg Collector-emitter voltage RBE = 2.7 k VCER Thermal Resistance Junction - ambient Rth JA ≤ 150 K/W 830 150 – 65 … + 150 Collector-base voltage VCB0 – 250 300 – BF 421 BF 423 Peak base current IBM 100 300 250 Emitter-base voltage VEB0 5 Junction - case2) Rth JC ≤ 75

  • High breakdown voltage
  • Low collector-emitter saturation voltage
  • Low capacitance
  • Complementary types: BF 420, BF 422 (NPN)

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. µACollector cutoff current VCE = 200 V,RBE = 2.7 k ,TA = 150 ˚CΩ ICER ––1 0 VCollector-emitter breakdown voltage IC = 1 mA BF 423 V(BR)CE0 250 – – nACollector cutoff current VCB = 200 V ICB0 ––1 0 UnitValuesParameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 10µA BF 421 BF 423 V(BR)CB0 300 250 Emitter-base breakdown voltage,IE = 10µA V(BR)EB0 5–– VCollector-emitter saturation voltage1) IC = 25 mA,Tj =150 ˚C VCEsatRF ––2 0 –DC current gain IC = 100µA,VCE = 20 V IC = 25 mA,VCE = 20 V hFE Emitter cutoff current,VEB = 5 V IEB0 ––1 0 MHzTransition frequency IC = 20 mA,VCE = 10 V,f = 20 MHz fT – 100 – AC characteristics pFOutput capacitance VCB = 30 V,f = 1 MHz C obo – 0.8 – Collector-emitter breakdown voltage IC = 10µA,RBE = 2.7 k BF 421 V(BR)CER 300 – – 1) Pulse test:t≤ 300 µs,D ≤ 2% .

Total power dissipationPtot= f(TA;TC ) Permissible pulse loadRthJA =f (tp) Collector currentIC = f(VBE ) VCE = 20 V,TA = 25 ˚C Collector cutoff currentICB0 = f(TA) VCB = 200 V

DC current gainhFE = f(IC ) VCE = 20 V,TA = 25 ˚C Output capacitanceC obo = f(VCB ) IC = 0,f = 1 MHz Transition frequencyfT = f(IC ) VCE = 10 V,f = 20 MHz