BF421 GE | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

FEATURES

Case: TO-92 Plastic Package Weight: approx. 0.18 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Small Signal Transistors (PNP) C BE .181 (4.6) .142 (3.6) Dimensions in inches and (millimeters) TO-92 Ratings at 25 °C ambient temperature unless otherwise specified .098 (2.5) max. ∅ .022 (0.55) Symbol Value Unit Collector-Base Voltage BF421 BF423 –VCBO –VCBO 300 250 V V Collector-Emitter Voltage BF423 –VCEO 250 V Collector-Emitter Voltage BF421 –VCER 300 V Emitter-Base Voltage –V EBO 5V Collector Current –I C 50 mA Peak Collector Current –I CM 100 mA Power Dissipation at Tamb = 25 °C P tot 8301) mW Junction T emperature T j 150 °C Storage T emperature Range T S –65 to +150 °C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. PNP Silicon Epitaxial Transistors especially suited for application in class-B video output stages of TV receivers and monitors. As complementary types, the NPN tran- sistors BF420 and BF422 are recom- mended. BF421, BF423

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. T yp. Max. Unit Collector-Base Breakdown VoltageBF421 at –IC = 100 µA, IE = 0 BF423 –V(BR)CBO –V(BR)CBO 300 250 V V Collector-Emitter Breakdown VoltageBF423 at –IC = 10 mA, IB = 0 –V(BR)CEO 250 – – V Collector-Emitter Breakdown VoltageBF421 at RBE = 2.7 kΩ , at –IC = 10 mA –V(BR)CER 3 0 0 ––V Emitter-Base Breakdown Voltage at –IE = 100 µA, IC = 0 –V(BR)EBO 5––V Collector-Base Cutoff Current at –VCB = 200 V , IE = 0 –ICBO ––1 0 n A Collector-Emitter Cutoff Current at RBE = 2.7 kΩ , –VCE = 250 V at RBE = 2.7 kΩ , –VCE = 200 V , Tj = 150 °C –ICER –ICER nA µA Collector Saturation Voltage at –IC = 30 mA, –IB = 5 mA –VCEsat ––0 . 8 V DC Current Gain at –VCE = 20 V , –IC = 25 mA hFE 5 0 ––– Gain-Bandwidth Product at –VCE = 10 V , –IC = 10 mA fT 6 0 ––M H z Feedback Capacitance at –VCE = 30 V , –IC = 0, f = 1 MHz C re ––1 . 6 p F Thermal Resistance Junction to Ambient AirRthJA – – 150 1) K/W 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. BF421, BF423