BF422 NJSEMI | Alldatasheet
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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BF420, BF422 Small Signal Transistors (NPN) ID r>j E max-0 .022 f (0. LQ 181 55) (4.6 t__ i -14
FEATURES
«j' * NPN Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and * As complementary types, the PNP transistors BF421 and BF423 are recommended XI98 (2.5) E —li o il—B C Dimensions in inches and (millimeters) MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Collector-Base Voltage BF420 BF422 Collector-Emitter Voltage BF422 Collector-Emitter Voltage BF420 Emitter-Base Voltage Collector Current Peak Collector Current Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range Symbol VCBO VCBO VCEO VCER VEBO lc 'CM ptot Tj TS Value 300 250 250 300 100 8301> 150 -65 to +150 Unit V V V V V mA mA mW 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case N.I .Seini-t (inductors reserves the right lo change lest conditions, parameter limits ;md package dimensions wkhenil notice Inr'armiition lumished by NJ Scmi-C unducton i$ believed to he htilh accurate .ind reliable .11 the lime of guing lo press. However ^ I oiiJucUirs .i^suincs no responsibility lor ;iny ermrs ><r omissions discovered in its n.se M Seini-(. oiulm.li rs cnco 'r^ Fn vrrit\\( d;tM-.h*-^»a >r*>. iirrt^nt hefiirf nfncin** tinten
BF420, BF422
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified Collector-Base Breakdown Voltage BF420 atlc = 100jiA, IB = 0 BF422 Collector-Emitter Breakdown Voltage BF422 atlc = 10mA, IE = 0 Collector-Emitter Breakdown Voltage BF420 atRBE = 2.7kQ, lc = 10mA Emitter-Base Breakdown Voltage at IE = 100 nA, IB = 0 Collector-Base Cutoff Current at VCB = 200 V, IE = 0 Collector-Emitter Cutoff Current at RBE = 2.7 kQ, VCe = 250 V at RBE = 2.7 kii, VCE = 200 V, Tj = 150 °C Collector Saturation Voltage at lc = 30 mA, IB = 5 mA DC Current Gain at VCE = 20 V, lc = 25 mA Gain-Bandwidth Product at VCE = 10V, lc = 10mA Feedback Capacitance at VCE = 30 V, lc = 0, f = 1 MHz Thermal Resistance Junction to Ambient Air Symbol V(BR)CBO V(BR)CBO V(BR)CEO V(BR)CER V(BR)EBO ICBO ICER ICER VcEsat HFE fr Cre RthJA Min. 300 250 250 300 Typ. Max. 0.6 1.6 1501> Unit V V V V V nA nA MA V MHz PF K/W 1> Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case