BF417 NJSEMI | Alldatasheet
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<^£.mL-dondu<itoi LPioaucti, L/nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL Compl. of BF 416 and BF 418 BF415 *BF 417 $f Preferred device Oiipotitif ntemrmmU Video output steps in TV seta Saga d» sortii dtt implifiatturs Video dtnt let tfUviseurs CEO 250V BF415 300V BF417 h21E (25mA) fT (25mA) i 30 min. 70 MHz typ. Maximum power dissipation Dissipation depuisiancemaxima/e Plastic caie JO-126- See outline drawing CB-16 on list pages BoJtier pltitique vel, ,»„,„ ratf ca.,e Ounitm o*t» lot IWI i I I v \\0 tOO 150 c E Collector connected to metal pert of case T (oCi Weisht : 0,7 g, CollKttur tiuirl t It ptrtk mtul- ABSOLUTE RATINGS (LIMITING VALUES) T ._+25°C (Unless otherwise stated) VALEURS LIMITES ABSOLVES D'UTILISATION amb T'" " IStufindiatiomeenininil BF41S BF417 Collector-base voltage Ttntion coHKOur-bm CoMector-emitter voltage Tffition colltclHtr-jmittwr Emitter-base voltage TtnsiOfT tmtttmr-btit Collector current Counnt eoflbctM/r Peak collector current Couflmt df erf 1* dt ceUtcnur Power dissipation Tcase= 2B°C O/«;w«wto»<n/itMnc» j = 25°C Storage temperature min. Ttfnptntun tit stodcfgf max VCBO VCEO VEBO 'CM ptot T«g 2SO 250 200 300 1.25 - 55 + 150 300 300 200 300 1.25 - 55 -H50 V V V mA mA W w .VI ,Semi-t niiduLlors reserves the right to change test conditions, parameter limili ;md packuge dimensions without notice Inl'nrmulion lumith«d by NI Svmi-C'onduclon it believed to he hdlh accurate and reliable .11 the lime of going to press. However Scini-L onJuitiirs .bsuincs IM re'-ptmsibilily for uny emirs »r oinissiuns Jisuivured in its use \\ Seini*Coiidtiili'rs envnurnues n-itrii'crs (D \\ciif\\t il:ila-:hcet.i ire
BF 415, BF 417 STATIC CHARACTERISTICS T i..25»C CARACTERISTIQUES STATIQUES amb (Un Ins otherwise stated) IStu I indkttiont contnirnl Collector-ban cut-off current Courtnt rttUuil eotticiwiivtw Emitter-base cut-off current Courtnt rttidutl imtntur-btm Collector-biM breikdown voltig* Ttntlon dt cltgittgt n«KIKir-6M Collector-emitter breakdown voltage Ttntfon dt cltqutgt coHtcttur-tonttttvr Etnitter-bise breakdown voltage Ttniioa in eltqutft tmtmur-bm Static forward currant transfer ratio VmHur lUtiqv* du npport dt tnntftrt dirtet du cottffAt Collector-emitter saturation voltage r«»A»n * Hivntfon ealHtwur-tiMtmir Base-emitter voltage Tvaion bftf^mnmir Collector-emitter saturation voltage Tuition dt utuimtion tallnmif-tmtmur Test conditions Condition dt mtiurt VCB= 200V IE =o VCB = 2BO V IE =0 VE8» 3V lc =0 lc = 10 MA IE =o lc = 10mA IB =0 IE = 10/iA IC =0 vCE= isv lc = 5mA VCE= 15V \\Q =* 25mA lc = 5mA Ig =1 mA vCE= 15V IQ =• 5 mA VCE= 15V lc = 25mA lc = 15V Ig — 25 mA 'CBO 'EBO V(BR)CBO V(BR)CEO* V(BR)E80 "21 E vCEsat VBE VCEsat BF415 BF417 8F415 BF417 BF41S BF417 Win. Typ. Max. 250 300 250 300 0,2 0,5 0,65 0,9 0,72 1 0,4 1 nA nA nA V V V V V V V V V Pulsed t = 300 m 5 < 2 %
BF 416. BF 417 DYNAMIC CHARACTERISTICS CARACTEfttSTIOUES OYNAUIQUES . 25°C (Unless otherwist stated) IStuf MxitiOm centrum) Output capacitance Transition frequency Frtqvtnct dt nwu/r/on High frequency knee voltage Ttntion dt eoudt tit tttutt Irtqutnct Test conditions Condltiwn dt mtiurt V B 30 V IE =0 f - 1 MHz VCE = 25 mA lc - 1 MHz f = 20 MHz lc = 25 mA f = 1 MHz C22b VCEK(HF) Notel Min. Typ. Max. 4,5 -20 F MHz V NOTE 1 : The high frequency knee voltage of a transistor is that value of the collector emitter voltage at which the small signal forward currant transfer ratio h2!« has dropped to 80% of the value at VCE - 50 V. Li tmitn c* COadf t htult frtqutnc* fun tnmktor tit, ptr dtllnltlon. It rtltur d* It Italian coltteuur tmttuvr pour ItqutUl It itpffrt dt trtmltn dirta du courtnt t pttit ilgntl h!t, ta tambt t B0% dt a nltur t SO V. h21e (X) 100 "CEK VCE(V) THERMAL CHARACTERISTICS CARACTERISTIQUES THEffMIQUES Junction-case thermel resistance /Mtf««» rhvmtut Uonctiv*,,,*,, Junction-ambient thermel resistance Rttfinnct thtmlQut lianetlon^mbltaal Rth(j^) Rth(j-a) 20,83 too °C/W "C/W