BF391 NJSEMI | Alldatasheet
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Technical content
O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BF391 BF392 BF393 NPN Silicon Planar sistors
DESCRIPTION
These plastic encapsulated general purpose transistor* are designed for applications requiring high breakdown voltage and low capacitance. The E-line package is formed by Injection moulding a SILICONE plastic specially selected to provide a rugged one-piece encap- sulation resistant to severe environments and allow the high junction temperature operation normally associated with metal can devices. E-line encapsulated devices are approved for use in military. Industrial and professional equipments. Alternative lead configurations are available as plug-in replacements of TO-5/39 and TO-18 metal can types, and for flat mounting. PLASTIC E-LINE <TO-92) ABSOLUTE MAXIMUM RATINGS Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Currant Power Dissipation at Tm,b=25°C atTc.M = 25°C Operating and Storage Temperature Range Symbol VCBO VC£0 VEBO Ic Plot TjlT,,, BF391 200 200 BF392 250 250 BF393 300 300 500 625 1.5 -55 to +175 Unit V V V mA mW W THERMAL CHARACTERISTICS Parameter Thermal Resistance Junction to Ambient Junction to Case Symbol Rth(l-amb) Rthlj-cau) Maximum 220 Unit °C/W °C/W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
CHARACTERISTICS (at 25°C ambient temperature unless otherwise stated). Parameter Collector-base BF391 breakdown voltage BF392 BF393 Collector-emitter BF391 breakdown voltage BF392 BF393 Emitter-base BF391 breakdown voltage BF392 BF393 Collector cut-off BF391 current BF392 BF393 Emitter cut-off BF391 current BF392 BF393 Static forward current All types transfer ratio All types Collector-emitter saturation voltage Collector-base saturation voltage Transition frequency Collector-base capacitance Symbol VIBRICBO VfBRICEO VIBRIEBO ICBO IEBO hFE VCE(M1) VBE<J«) fj Cr. Min. 200 250 300 200 250 300 6.0 6.0 6.0 Max. 0.1 0.1 0.1 0.1 0.1 0.1 2.0 2.0 1.6 Unit V V V V V V V V V HA /^A KA MA *<A V V MHz PF Test Conditions IC = 100MA, IE=0 lc = 10mA, IB=0* lE = 100)iA, lc=0 VCB = 160V, IE = 0 VCB=200V, IE=0 VCB = 200V, IE=0 VBE=4V, lc = 0 VBE = 6V,IC = 0 VBE=6V, lc = 0 lc = 1mA, VCE = 10V< lc - 10mA, VCE = 10V* lc=20mA, IB = 2mA lc = 20mA, lB = 2mA lc = 10mA, VCE = 20V f=20MHz VCE=60V, IE-0 f«1MHz
- Measured under pulsed conditions. Pulse width =300(48. Duty cycle <2%.