BF324 SIEMENS | Alldatasheet

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25C D m@ 8235605 OOO4473 O MMSIEG [> 72 3/~77 : PNP Silicon RF Transistor BF324 | SIEMENS AKTIENGESELLSCHAF '3 oO i for large-signal VHF stages . BF 324 is an epitaxial PNP silicon planar transistor in TO 92 plastic package (10 A 3 j DIN 41868). It is particularly outstanding for a low reverse transfer capacitance and is } preferably used in common base configurations, e.g. in VHF tuner input stages. : 25max €B¢ : Type Ordering code onus 7 BF 324 | 062702-F311 fon ‘ 13521 —46 9) kie0a : Approx. weight 0.26 g Dimensions in mm Maximum ratings : Collector-emitter voltage Vez 30 Vv Collector-base voltage ~Veso 30 v Emitter-base voltage -Veso 4 v : Collector current Ie 26 mA : Base current -Ip 5 mA Junction temperature yj 150 °C Storage temperature range Thee -85 to+150 | °C Total power dissipation Prot 250 mW Thermal resistance Junction to ambient air Rena | s420 | Kw ; 519

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25C D MM 8235605 OOONN74 2 MMSIEG § —7u5/-/7 - 25C 04474 1») 324 SIEMENS AKTIENGESELLSCHAF - - BF Static characteristics (Tam» = 25°C) Collector cutoff current (-Vep = 30 V; Ie = 0) —Icpo <50 nA Collector-emitter breakdown voltage (Ig = 10 mA; Ig = 0) “Verceo | >30 v Emitter-base breakdown voltage (-Ig = 10 pA; Ic = 0) -Vierveso | >4 v DC current gain (-Vog = 10 V; ~le = 1 mA) hee 45 - (-Vog = 10 V; ~I¢ = 4 mA) hee 50 (26 to 160) | - i Base-emitter voltage . ("Vee = 10V; ~I¢ = 4 mA) —Vee 0.76 Vv Dynamic characteristics (Tamp = 25°C) Transition frequency (f = 100 MHz) (-Ig = 1 mA; —Vce = 10 V) fr 350 MHz (Hig = 4 mA; ~Vcg = 10 V) fr 450 MHz , (Ig = 8 mA; ~Vee = 10 V) f 440 MHz Reverse transfer capacitance (-Veg = 10 V; —Vae = 0; f = 1 MHz) Crap on pF : Noise figure (—Ic = 2 mA; —Vce = 10 V); . f= 100 MHz; Ry = 60 2) NF 3 dB : 520 1897 c-02 ° t

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