BF246A SIEMENS | Alldatasheet
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" 25¢ D mM 8235605 OOO44LH T MMSIEG ‘42 3/25 N-Channel Junction Field-Effect Transistors BF 246A 25C 04464 D0 Br 2468 i SIEMENS AKTIENGESELLSCHAF BF c BF 246 A, B, and C are N-channel junction field-effect transistors in plastic package similar : to TO 92 (10 A 3 DIN 41868). They are particularly suitable for RF amplifiers. ; 0,48 «0,48 Q : Type Ordering code eo - $ : BF 246 062702-F219 5, BF 246A 062702-F393 sari 3 BF 2468 062702-F254 nin "oman h2max 3 BF 246C 062702-F250 : Approx. weight 0,25 g . Dimensions in mm : Maximum ratings Drain-source voltage £Vps 25 v Drain-gate voltage (Js = 0) +Vogo | 25 v . Gate-source voltage (Ip = 0) -Veso | 25 v : Gate current Ig 10 mA : Junction temperature yj 160 °c : Storage temperature range Teg 65 to 150 °c Ps Total power dissipation (Tamb S75°C)"? Prot 300 mw Thermal resistance Junetion to ambient air!) Pensa 260 Kw : 1) If the transistors with max 3 mm lead length are fixed on PCBs with a 10 mm x 10 mm large copper area for the drain terminal, RthJA $ 2 K/W, Ptot = max. 300 mW then applies up to Tamb = 80 C, 510 =~ , ~-- -
1887 B-06
25C D MM 8235605 OOONNES 4b MMESIEG _ —7- 9/, 2 to ~~ " 25C_ 04465 HAS i 0%. P BF 246A { BF 246B . SIEMENS AKTIENGESELLSCHAF ——WWW— BF246C i Static characteristics (Temp = 25°C) : Gate cutoff current i (-Ves = 15 V, Vos = 0) less 56 mA i Gate-source breakdown voltage * (-Ig = 1 HA, Vos = 0) Varios | 225 v i Drain-source short-circuit current (Vos = 18 V, Veg = 0) BF 246A: Ipss 301080 | mA BF246B: loss 60t0140 | mA BF246C: Joss 110to250 | mA Gate-source voltage 3 (Vos = 15 V, Ip = 200 pA) -Ves 0.6 to 14 Vv : BF246A: —Vos 15to40 |v : BF 246B: —Ves 3.0 to 7.0 Vv BF246C: —Ves 5.6 to 12 v . Gate-source pinch-off voltage (Vos = 15 V, Ip = 10 nA) Vp 06t0145 |v : Dynamic characteristics (Tamb = 25°C) \\ Small signal short circuit forward . ‘ transfer admittance . Ws = 18 V, Ip = 10 mA, f= 1 kHz) Ivats! 23 (28) mS Cutoff frequency of small-signal short-circuit forward transfer admittance"? (Vos = 18 V, Ves = 0) fyais 450 MHz Capacitances (Vos = 15 V, Ip = 10 mA) . f= 1 MHz: Cris 15 pF . C225 15 pF f= 1 kHz: ~Ci25 35 pF - 1) Frequency for a decrease in the small-signal short-circuit forward transfer admittance to 70% of the value at 1 kHz.
1868 B-07 Bi
25C D MM 8235605 COOU4L 3 MMSIEG NGESELLSCHAF EGONDS T= H/-25 SIEMENS AKTIE! CHAF 3466p BF 246A BF 246 B oo BE 286 C Total perm. power dissipation verns tmperature mW Pro * f (Tern) OCT TTT : Eee fe OCC CTP rrr rrr rr yyy i seo CECE CCE EEC ECeCeeeeR cee . yo ENE mo FLCC . SSSREREGGE\\SEEE EERE CC . ECE to CEEEEEC CECE . EEECer eee eee] TTP rrr rrr yr ar . EEC ECoCCCeeeeeeree
9 COCEEE EEN
° 50 100 150°C — Timp 512 1889 B-08
wt oO — = - 25C D MM 8235605 0004470 5 MMSIEG © J-3/-25° i N-Channel Junction Field-Effect Transistors BF 256A { ; : BF 266 B i SIEMENS AKTIENGESELLSCHAF 04470 “9 BF 256C : BF 256 A, B, and C are N-channel junction field-effect transistors in plastic package : similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for RF applications. : 25max OSG ‘ Type Ordering code 068x048 5 ; BF 266 A | 068000-A5168 3 4 : BF 2568 | 062702-F413 ; BF 266 C | Q68000-A5169 eanin I a ; BF 266 | 062702-F733 52max vimax ! Approx. weight 0.25 g Dimensions in mm : Maximum ratings . Drain-source voltage £Vps 30 Vv : Drain-gate voltage (Ig = 0) +Voao | 30 v : Gate-source voltage (Jp = 0) —Veso | 30 Vv . Gate current Ig 10 mA Junction temperature jj 1650 °c ; ‘Storage temperature range Tea -65 to 150 °c j Total power dissipation (Tamp $ 75°C)') Prot 300 mw i Thermal resistance . : Junction to ambient air Rinna | $250 | kaw : 1) If the transistors with max 3 mm lead length are fixed on PCBs with a 10 mm x 10 mm large copper area for the drain terminal, Athya 2 K/W, Ptot= max. 300 mW then applies up to Temb = 90°C. 516 -
1893 B-12
.25C D M™ 4235605 OOON47L 27 MMBSIEG © —723/-25 i ~ ©" 04471 j SIEMENS AKTIENGESELLSCHAF ~ — BF256A = BF 256B : TTT BEC | Static characteristics (Tamb = 25°C) : Gate cutoff current : (Vos = 20 V, Vos = 0) -less 36 nA i Drain-source short-circuit current ' (Vos = 15 V, Veg = 0) BF 256A: pss 3to7 mA i BF 266B: pss 6to13 maa : BF256C: Ipss 11 to 18 mA i Gate-source voltage . (Vos = 18 V, Ip = 200 uA) Ves 0.8 to 7.6 va) j Gate-source breakdown voltage f (-Ig = 1 HA, Vos = 0) —Vieriess | =30 Vv ! Dynamic characteristics (Temp = 25°C) i ‘Small-signal short-circuit i forward transfer admittance t (Vos = 15 V, Ves = 0, f= 1 kHz) |y2ts| 5 (24.5) mS . Reverse transfer capacitance t (os = 20V, ~Vgs = 1 V, f= 1 MHz) Cras 07 pF 1 Output capacitance . . (os = 20 V, Veg = 0, f = 1 MHz) C225 1.2 pF F Cutoff frequency of small-signal short circuit forward transfer admittance!) . (Vos = 16 V, Ves = 0) fyats 1 GHz . Power gain (Vos = 15 V, Rg = 47 Q, f = 800 MHz) Gp "1 dB Noise figure (ps = 10 V, Rg = 47 , f= 800 MHz) NF 18 aB 1) Frequency for a decrease in the smali-signal short-circuit forward transfer admittance to 70% of the value st 1 kHz. _ 517
1894 B-13
" 25C D m™ 8235605 g00447e | MISIES “73/5 SIEMENS AKTIENGESELLSCHAF BE 256A a Sa BE 256 C : } eee Sa 100 10 SSIS ees yo RR oe Fret | ae EERE EEE | PPP PrN rrr) FEE EEEEE EEE HEEEEEEENEEEEH FREE EEE ARSE E : HEE w LECT ao FEE EECCA SSSSearsasaaa==| HEEEEEEHEENE EE FERRE ASEH EECCA CTA TTT rrr) ~ COP wit Z wo ETA SSP sSneessaaaee| K FH EEEEEEE SERENE ReR Pere COCO} LITT TT) 1 = ECE HH TIT Hi ire 0 50 100 150°C t . Tin Dynamo drain source: resistance ‘Small-signal short-circuit forward xa Pere ee Shae ns Vee s iS Vsfatia ea aee ==—S-S eos . f rebel be 7 HE labored i aeenoceaae
1 BF256A
@ LLL eet EERE y, Serriarnee HY [VA | eA A soa EAS CCC Bee EOPee eee wltl LITT »>COCCCCCeo 0 1 2 3 4 5Vv 0 0 20mA Nos e —b 518 .