BF245A NJSEMI | Alldatasheet
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^zmi-Conauctoi y^ , LJna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IM-Channel Junction Field-Effect Transistors TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BF 245 A BF 245 B BF 245 C BF 246 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers. Maximum ratings Drain-source voltage Drain-gate voltage (Js ** 0) Gate-source voltage {/p = 0) Drain current Gate current Junction temperature Storage temperature range Total power dissipation (Tamb Thermal resistance Junction to ambient air 75"C)1) ±Vbs +VDG -VGS Tj r3tg Plot 150 -65 to +1 60 300 V V V mA mA mW 5250 I K/W1 Static characteristics (T, = 25°C) Gate cutoff current Gate-source breakdown voltage MG-t|iA.VD8-0| Drain-source short-circuit current Gate-source voltage Gate-source pinch-off voltage BF 245 A: BF 245 B: BF 245 C: BF245A: BF 245 B: 8F 245 C: -£« -V(BR|G9S JOBS /OSS 'oss -VP £500 530 2.0 to 6.5 6tol5 12 to 25 0.4 to 2. 2 1.6 to 3.8 3.2 to 7.5 0,5 to 8,0 oA nA V mA2' mA mA V V V Dynamic characteristics (ramb == 25°C) Four-pole characteristics iVDS m 1 5 V, l/cs » 0, 1 = 1 kHz) 15 V. VGS = 0, f =* 200 MHz) iVos = 20 V. -VQS = 1 V, f - 1 MHz) Cutoff frequency of short-circuit forward transfer admittance1* Noise figure S = 1BV,VQs = 0. 100MHz,famb = X21s| K22sl 011 X21sl 9229 Cl1s Cl2s C22s fy21a NF 3.0 to 6.5 250 4.0 1.1 1.6 700 1.5 mS MS MS mS MS pF PF pF MHz dB
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NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors