BF245A SIEMENS | Alldatasheet
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25C D MM 8235605 GOO44S57 2 MMSIEG - T-3(-25° i N-Channel Junction Field-Effect Transistors BF 245A | BF 245B i SIEMENS AKTIENGESELLSCHAF 57 oO BF 245C H BF 245 A, B, and C are N-channel junction field-effect transistors in plastic package similar i to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in de, AF and RF : amplifiers. i 2,5max DsG : , Type Ordering code taeone 5 : BF 245 Q62702-F236 a Ra BF 245 A | 062702-F209 + BF 245 B | 062702-F182 tarnin - BF 245 C | 062702-F205 “ 52max ‘6max 3 Approx. weight 0.25 g Dimensions in mm Maximum ratings Drain-source voltage Vos 30 Vv : Drain-gate voltage (Ig = 0) +Voq |: 30 v 1 Gate-source voltage (Ip = 0) —Ves_ | 30 v : Drain current Ip 25 mA i Gate current Ig 10 mA : Junction temperature q 150 °c | Storage temperature range Tstg -65to+160 | °C } Total power dissipation (Temp S 75°C)") Prot 300 mw i Thermal resistance Junction to ambient air Rina (| S250 | kw!) i i i 1) If the transistors with max 3 mm lead length ara fixed on PCBs with a 10 mm x 10 mm large copper area for the drain terminal, RthJA™ 2 K/W,Ptot™ max. 300 mW then applies up to Tamb = 90°C. ‘1880 A-13 503
25C D MM 4235605 0004458 4 MMSIEG eH -QH5 25C 04458 Dp) BF 245A BF 245B SIEMENS AKTIENGESELLSCHAF ————__ BF 245 Static characteristics (7; = 25°C) Gate cutoff current (Ves = 20 V, Vos = 0) ~Icss <6 nA (Veg = 20 V, Vps = 0, Tj = 125°C) -Igss $500 nA i Gate-source breakdown voltage : (-Ig = 1 pA, Vos = 0) —Varass | 230 Vv . Drain-source short-circuit current (Vps = 15 V, Ves = 0) BF 245A: Ipss 2.0 to 6.5 mA?) BF245B: [ps5 6to 15 mA . BF245C: loss 12 to 25 mA . Gate-source voltage . (Vos = 15 V, Ip = 200 nA) BF245A: -Ves 0.41022 | v2 3 BF245B: -Ves 1.6t038 |v BF245C: —Ves 3.2 to 7.5 Vv Gate-source pinch-off voltage (ps = 15 V, Ip = 10 nA) ~Vp 051080 |V Dynamic characteristics (Tamp = 25°C) . Four-pole characteristics ; (Vps = 15 V, Vas = 0, f= 1 kHz) y21. 3.0 106.5 mS , Weed 26 HS : (Vos = 15 V, Ves = 0, f = 200 MHz) gi 250 us Wats! 6 ms ° 9226 40 »S (Vps = 20 V, —Ves = 1 V, f= 1 MHz) Cits 40 pF Cras 11 pF C225 1.6 pF . Cutoff frequency of . ' short-circuit forward transfer admittance") (Vps = 15 V, Vas = 0) fyats 700 MHz . Noise figure (Vos = 15 V, Vas = 0, Ry = 1k, 1 = 100 MHz, Temp = 28°C) NF 16 dB 1) Frequency for a decreass in tho small-signal short-circuit forward transfer admittance to 70% of the value at 1 kHz. 2) BF 245 Al: Ipgg = 2.0 to 3.0 mA, -Vas = 0.410 1.0V BF 245 A2: tos $= 3.0to 4.5 mA, -VGs=0.7 to 14V BF 246 A3: [pg § = 4.5 to 6.5 mA, -VGs = 1.1 to22V Soe 1881 A-14 : .
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25C D MM 8235605 OOON4E) 4 MMESIEG © —7~3/-25 " 25C 04461 0 BF 245 A BF 245 B Drain current versus temperature ‘Drain current versus temperature Ig = f(T); Vos = parameter? Vos = 15 V Ip = # (Tj); Ves = parameter, Vos = 15 V mA BF 245A mA . ‘FER "ee fe COOP SSeeccce ny COCO eee i COCCPNSECP EE COCCCCCCCeeee| i I 3s COCO Sesov I 5 COC : ECCCCCeee NAL COCCCCCOCCeeeer) : COCO PASSE COCCCCCCeeceerr) . CCCCCCCCCCCeSS) COCCCeCe eee 5 COCR) CCCeeeeeccccee ,
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—y —5 : Drain current versus temperature Correlation between Vp and Ipss : To= f(T); Vas = parameter, Vos = 15 V Vos = 15 V, lo = 10 mA: Fj = 25°C : mA BF245C v ES Mcseeneeeeesss! EERE % ? EEEEEEEEPEE . CORSECEP Er er rer Cocco ss CECE i COCO . CCCCCSSECCCCeee CeCCCCCeeeee eer) : CCPC) TEPC CCCCCCCeesS cee 6 ECC 4 CCCCCCC Cees COCO ! CORO COO : “ A
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- 25¢ D MM B235L05 OO044b2 & MMSIEG - —7-3/—QS COL ure . “es BF 245A : - SIEMENS AKTIENGESELLSCHAF ————__ pene : Reverse transfer capacitance : Input characteristics Cus = f (Ves) Gras = #(-Vas): Vos = 20; : DF Vos = 20V; f= 1 MHz; Tam = 25°C DF f= 1 MHz: Tap = 26°C t 6 45 ? (LLL IT SCT TTT Try : Cine HEH HHH - tee ELE PEEP rry :
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LETT TTT TT CECE rer ; o- LIT TT TTT oL LITT TTT TTT | 0 5 Vv 0 5 Vv > — “Ves — Ves Dynamic drain-source resistance: Reverse current versus temperature tos = # (Vash: Vos = 0; A loss = #(T); “Veg = 20V; Vos = 0 ROE UE Tn 28S == sSss====2===> . SS SSS 5 : Seeemeaacoone? a ts ER . tess COCCeePooeee es er } GOCE f PERE S288 oosueszacze wLitT ECEEEEC Eee === == : w LO TT a oe or a : SSSSSS7SSSS Saas ee | EERE REE EER EEEH [arasay or 2st / ersc/| _| COCO =| ‘ wh ZC =a ol ; SSP SSsnaenSSaee| PARAS Saceeeoeoeeeee 7 . eC LLL} wettl tT T 0 50 00 190°C 0 1 2 3 av —rt Ves 508 1885 B-04 : . 1
25C D MM 6235605 OOO44bS & MMSIEG - fe a] aes : _25C 04463 DO BF 245A | BF245B i SIEMENS AKTIENGESELLSCHAF ——__—___ BF 245 C { ‘Small-signal short-circuit forward Nolse figure NF = () . transfer admittance yars = f (lo) Vps = 15 V; Vas = 9: : mS Vos = 16 V:f = 1kHz; Tamp = 26°C dB Ry =1KO, Tomb = 25°C i BCT TTT TEE > TT : : Val ST era ve COICO : Ci | erzse_| SN : { Horns i CO ce Ce ol ALT 2 CIC CV CAA CO CO AT) CVAZ On NAT CAA LC re TT RAE an a SEC SECM Con Co ; WOCEeC CT CoA Cr : POCO Cee gL POPE COT Con Ee . »LLLEET TTT CLOT TT : 0 0 DmA we 10! 10? 10'MHz 7 —h —t i d i