BF245A NXP | Alldatasheet
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Technical content
Supersedes data of April 1995
1996 Jul 30
BF245A; BF245B; BF245C N-channel silicon field-effect transistors
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NXP Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C
FEATURES
Interchangeability of drain and source connections Frequencies up to 700 MHz.
APPLICATIONS
LF, HF and DC amplifiers.
DESCRIPTION
General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. PINNING CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PIN SYMBOL DESCRIPTION 1 d drain 2 s source 3g g a t eFig.1 Simplified outline (TO-92 variant) and symbol. handbook, halfpage MAM257 s d g QUICK REFERENCE DATA SYMBOL PARAMETER CONDITI ONS MIN. TYP. MAX. UNIT VDS drain-source voltage 30 V VGSoff gate-source cut-off voltage I D =1 0n A ; VDS =1 5V 0.25 8V VGSO gate-source voltage open drain 30 V IDSS drain current VDS =1 5V ; VGS =0 BF245A 2 6.5 mA BF245B 6 15 mA BF245C 12 25 mA Ptot total power dissipation Tamb =7 5 C 300 mW yfs forward transfer admittance V DS =1 5V ; VGS =0 ; f=1k H z ; Tamb =2 5 C 3 6.5 mS Crs reverse transfer capacitance V DS =2 0V ; VGS = 1V ; f=1M H z ; Tamb =2 5 C 1.1 pF
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NXP Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum 10 mm 10 mm. THERMAL CHARACTERISTICS STATIC CHARACTERISTICS Tj =2 5 C; unless otherwise specified. Note 1. Measured under pulse conditions: t p = 300 s; 0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 30 V VGDO gate-drain voltage open source 30 V VGSO gate-source voltage open drain 30 V ID drain current 25 mA IG gate current 10 mA Ptot total power dissipation up to Tamb =7 5 C; 300 mW up to Tamb =9 0 C; note 1 300 mW Tstg storage temperature 65 +150 C Tj operating junction temperature 150 C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 250 K/W thermal resistance from junction to ambient 200 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)GSS gate-source breakdown voltage I G = 1 A; VDS =0 30 V VGSoff gate-source cut-off voltage I D =1 0n A ; VDS =1 5V 0.25 8.0 V VGS gate-source voltage ID =2 0 0A; VDS =1 5V BF245A 0.4 2.2 V BF245B 1.6 3.8 V BF245C 3.2 7.5 V IDSS drain current VDS =1 5V ; VGS =0 ; n o t e1 BF245A 2 6.5 mA BF245B 6 15 mA BF245C 12 25 mA I GSS gate cut-off current VGS = 20 V; VDS =0 5n A VGS = 20 V; VDS =0 ; Tj =1 2 5C 0.5 A
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NXP Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C DYNAMIC CHARACTERISTICS Common source; Tamb =2 5 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cis input capacitance VDS =2 0V ; VGS = 1V ; f=1M H z 4 pF Crs reverse transfer capacitance V DS =2 0V ; VGS = 1V ; f=1M H z 1.1 pF Cos output capacitance VDS =2 0V ; VGS = 1V ; f=1M H z 1.6 pF gis input conductance VDS =1 5V ; VGS =0 ; f=2 0 0M H z 250 S gos output conductance V DS =1 5V ; VGS =0 ; f=2 0 0M H z 40 S yfs forward transfer admittance V DS =1 5V ; VGS =0 ; f=1k H z 3 6.5 mS VDS =1 5V ; VGS =0 ; f=2 0 0M H z 6 mS yrs reverse transfer admittance V DS =1 5V ; VGS =0 ; f=2 0 0M H z 1.4 mS yos output admittance V DS =1 5V ; VGS =0 ; f=1k H z 25 S fgfs cut-off frequency VDS =1 5V ; VGS =0 ; gfs = 0.7 of its value at 1 kHz 700 MHz Fn o i s e f i g u r e V DS =1 5V ; VGS =0 ; f=1 0 0M H z ; RG =1k (common source); input tuned to minimum noise 1.5 dB handbook, halfpage−10 −10−3 −10−2 −10−1 150500 MGE785 100 typ Tj (°C) IGSS (nA) Fig.2 Gate leakage current as a function of junction temperature; typical values. VDS =0 ; VGS = 20 V. Fig.3 Transfer characteristics for BF245A; typical values. handbook, halfpage VGS (V) ID (mA) −40 −2 MGE789 VDS =1 5V ; Tj =2 5 C.
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NXP Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C handbook, halfpage VDS (V) ID (mA) 02 0 10 MBH555 VGS = 0 V −0.5 V −1 V −1.5 V Fig.4 Output characteristics for BF245A; typical values. VDS =1 5V ; Tj =2 5 C. Fig.5 Transfer characteristics for BF245B; typical values. VDS =1 5V ; Tj =2 5 C. handbook, halfpage VGS (V) ID (mA) −40 −2 MGE787 handbook, halfpage VDS (V) ID (mA) 02 0 10 MBH553 VGS = 0 V −0.5 V −1 V −1.5 V −2 V −2.5 V Fig.6 Output characteristics for BF245B; typical values. VDS =1 5V ; Tj =2 5 C. Fig.7 Transfer characteristics for BF245C; typical values. handbook, halfpage VGS (V) ID (mA) −10 0−5 MGE788 VDS =1 5V ; Tj =2 5 C.
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NXP Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C handbook, halfpage VDS (V) ID (mA) 02 0 10 MBH554 VGS = 0 V −1 V −2 V −3 V −4 V Fig.8 Output characteristics for BF245C; typical values. VDS =1 5V ; Tj =2 5 C. Fig.9 Drain current as a function of junction temperature; typical values for BF245A. VDS =1 5V . handbook, halfpage 0 50 150 Tj (°C) ID (mA) MGE775 100 −0.5 V VGS = 0 V −1.5 V −1 V Fig.10 Drain current as a function of junction temperature; typical values for BF245B. handbook, halfpage 0 50 150 MGE776
100 Tj (°C)
(mA) VGS = 0 V −2 V −1 V VDS =1 5V . Fig.11 Drain current as a function of junction temperature; typical values for BF245C. VDS =1 5V . handbook, halfpage 0 50 150 MGE779 100 Tj (°C) ID (mA) VGS = 0 V −4 V −2 V
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NXP Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C Fig.12 Input admittance; typical values. handbook, halfpage MGE778 103 102 102 10−1 10 102 103 gis (μA/V) bis (mA/V) f (MHz) bis gis VDS =1 5V ; VGS =0 ; Tamb =2 5 C. Fig.13 Common source reverse admittance as a function of frequency; typical values. handbook, halfpage MGE780 104 103 102 10−1 10−2 10 102 103 brs (μA/V) Crs (pF) f (MHz) brs Crs VDS =1 5V ; VGS =0 ; Tamb =2 5 C. Fig.14 Common-source forward transfer admittance as a function of frequency; typical values. VDS =1 5V ; VGS =0 ; Tamb =2 5 C. handbook, halfpage10 MGE782 10 102 103 gfs, −bfs (mA/V) f (MHz) −bfs gfs Fig.15 Common-source output admittance as a function of frequency; typical values. VDS =1 5V ; VGS =0 ; Tamb =2 5 C. handbook, halfpage MGE783 103 102 10−1 10−2 10 102 103 gos (μA/V) bos (mA/V) f (MHz) bos gos
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NXP Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C Fig.16 Input capacitance as a function of gate-source voltage; typical values. VDS =2 0V ; f=1M H z ; Tamb =2 5 C. handbook, halfpage −2 −10 MGE777 −4 −6 −8 VGS (V) Cis (pF) typ Fig.17 Reverse transfer capacitance as a function of gate-source voltage; typical values. VDS =2 0V ; f=1M H z ; Tamb =2 5 C. handbook, halfpage 0 −10 1.5 0.5 MGE781 Crs (pF) −2 −4 −6 −8 VGS (V) typ Fig.18 Forward transfer admittance as a function of drain current; typical values. handbook, halfpage MGE791 |yfs| (mA/V) ID (mA) 0 2010 155 BF245A BF245B BF245C VDS =1 5V ; f=1k H z ; Tamb =2 5 C. Fig.19 Gate-source cut-off voltage as a function of drain current; typical values. VDS =1 5V ; Tj =2 5 C. handbook, halfpage 01 0 30 −10 MGE784 BF245A IDSS at VGS = 0 (mA) VGSoff at ID = 10 nA (V) BF245B BF245C
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NXP Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C Fig.20 Drain-source on-state resistance as a function of gate-source voltage; typical values. VDS = 0; f = 1 kHz; Tamb =2 5 C. handbook, halfpage 103 10−1 102 −4−2−10 MGE790 RDSon (kΩ) BF245A BF245B BF245C VGS (V) Fig.21 Noise figure as a function of frequency; typical values. VDS =1 5V ; VGS =0 ; RG =1k ; Tamb =2 5 C. Input tuned to minimum noise. handbook, halfpage MGE786 11 0 typ 102 103 F (dB) f (MHz)
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NXP Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C PACKAGE OUTLINE UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 5.2 5.0 b 0.48 0.40 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 L 14.5 12.7 e 2.54 1.27 (1) max max 2.5 2.5 0.66 0.55 DIMENSIONS (mm are the original dimensions) Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. SOT54 variant A L 0 2.5 5 mm scale b c D b1 L1 d E Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant e 04-06-28 05-01-10
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NXP Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
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NXP Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.
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