BF2040 SIEMENS | Alldatasheet
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Semiconductor Group Jun-05-19981 Silicon N-Channel MOSFET Tetrode Preliminary data
- For low noise, high gain controlled input stages up to 1GHz
- Operating voltage 5V VPS05178 ESD : Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration Package BF 2040 NCs Q62702-F1775 1 = S 2 = D 3 = G2 4 = G1 SOT-143 Maximum Ratings UnitParameter ValueSymbol Drain-source voltage VDS V14 40 mAContinuos drain current ID Gate 1/gate 2 peak source current ±IG1/2SM 10 Gate 1 (external biasing) +VG1SE 7 V 200 mWTotal power dissipation, TS = 76 °C Ptot Storage temperature Tstg °C-55 ...+150 Channel temperature Tch 150 Thermal Resistance Channel - soldering point £370 K/WR thchs Semiconductor Group 1 1998-11-01
Semiconductor Group Jun-05-19982 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Drain-source breakdown voltage ID = 650 µA, -V G1S = 4 V, - V G2S = 4 V V(BR)DS - - V12 Gate 1 - source breakdown voltage +IG1S = 10 mA, V G2S = 0 V, V DS = 0 V +V(BR)G1SS - -8.5 Gate 2 - source breakdown voltage IG2S = 10 mA, V G1S = V DS = 0 - -+V(BR)G2SS 8.5 Gate 1 source current VG1S = 5 V, V G2S = 0 V 50+IG1SS - nA- 50Gate 2 source leakage current VG2S = 5 V, V G1S = 0 V, V DS = 0 V - -+IG2SS Drain current VDS = 5 V, V G1S = 0 V, VG2S = 4 V - - µAIDSS - Drain-source current VDS = 5 V, V G2S = 4 V, R G1 = 40 kW 15 mA- -IDSX VVG2S(p)Gate 2-source pinch-off voltage VDS = 5 V, ID = 20 µA -0.60.3 0.3 0.7 -Gate 1-source pinch-off voltage VDS = 5 V, V G2S = 4 V, ID = 20 µA VG1S(p) AC characteristics Forward transconductance VDS = 5 V, ID = 15 mA, V G2S = 4 V gfs 45- - mS 3.7 -Gate 1 input capacitance VDS = 5 V, ID = 15 mA, V G2S = 4 V, f = 1 MHz C g1ss - pF 2.3 --C dssOutput capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Noise figure VDS = 5 V, ID = 15 mA, f = 800 MHz F - 2 - dB Semiconductor Group 2 1998-11-01