BF2000

BF2000 SIEMENS | Alldatasheet

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Semiconductor Group Au -03-19981 Silicon N Channel MOSFET Tetrode Target data sheet

• Short-channel transistor with high S/C quality factor
• For low-noise, gain-controlled input stages up to 1 GHz VPS05178 PackageType Marking Ordering Code Pin Configuration BF 2000 NDs Q62702-F1771 4 = G1 SOT-1431 = S 2 = D 3 = G2 Maximum Ratings Parameter Symbol UnitValue VDS 12Drain-source voltage V 30ID mAContinuos drain current 10±IG1/2SMGate 1/gate 2 peak source current Total power dissipation, TS = 76 °C mWPtot 200 Storage temperature - 55 ...+150 °CTstg Tch 150Channel temperature Thermal Resistance £370 K/WChannel - soldering point R thchs Semiconductor Group 1 1998-11-01

Semiconductor Group Au -03-19982 Electrical Characteristics at TA = 25 °C; unless otherwise specified. Parameter Symbol Values Unit typ. max.min. DC characteristics Drain-source breakdown voltage ID = 10 µA, -VG1S = 4 V, - V G2S = 4 V V(BR)DS - V-12 Gate 1 source breakdown voltage ±IG1S = 10 mA, VG2S = V DS = 0 ±V (BR)G1SS 8 12 V- ±V (BR)G2SS 8 12-Gate 2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 V, V DS = 0 V nAGate 1 source leakage current ±VG1S = 5 V, V G2S = V DS = 0 ±IG1SS -- 50 Gate 2 source leakage current ±VG2S = 5 V, V G1S = 0 V, V DS = 0 V 50- -±IG2SS µADrain current VDS = 5 V, V G1S = 0 , V G2S = 4 V IDSS 1- - V-- 0.3VG1S(p)Gate 1-source pinch-off voltage VDS = 5 V, V G2S = 4 V, ID = 200 µA VGate 2-source pinch-off voltage VDS = 5 V, ID = 100 µA - 0.2VG2S(p) - Semiconductor Group 2 1998-11-01

Semiconductor Group Au -03-19983 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Forward transconductance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 kHz gfs - 24 - mS Gate 1 input capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz C g1ss - 1.2 - pF Gate 2 input capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz C g2ss - - - Feedback capacitance VDS = 8 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz C dg1 - 25 - fF Output capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz C dss - 0.8 - pF Power gain VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 45 MHz G ps 28 29 - dB Power gain VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 800 MHz G ps - 22 - Noise figure VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 45 MHz F - 1.1 - Noise figure VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 800 MHz F - 1 - Gain control range VDS = 8 V, VG2S = 4 ... -2V, f = 800 MHz DG ps 40 - - Semiconductor Group 3 1998-11-01