BF179 NJSEMI | Alldatasheet

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  • RN AVE. • TELEPHONE: (973) 376-2922 GFIELD, NEW JERSEY 07081 (21 2) 227-6005 BF179A FAX: (973) 376-8960 BF179B BF179C NPN SILICON ANNULAR TRANSISTORS . . . designed for high-frequency applications in color difference signal power stages of color television.
  • High Collector-Emitter Breakdown Voltage - BVCER = 250 Vdc (Min) @ Ic » 4.0 mAdc - BF 179C
  • Low Collector-Base Time Constant - rbb'Cb'c " 100 ps (Max) @ Ic = 10 mAdc
  • Low Collector Cutoff Current — 'CBO " 2°0 "Adc (Max) @ VCR = '60 Vdc MAXIMUM RATINGS Reting Symbol BF179A BF179B BF17BC Unit Collector-Emitter Voltage VCER 160 220 260 Vdc (RBE • 10 k ohm) Collector-Emitter Vortaga VCES 16° 220 250 Vdc Emitter-Baae Voltage VEB 5.0 — Vdc Operating Junction Temperature Range Tj - 200 — •• » °C Storage Temperature Range TM, •• 55 to + 200 •- °C THERMAL CHARACTERISTICS Charaoteriftic Symbol Max Unit Thermal Retinence, Junction to Case RTHJcate 45 °C/W Thermal Refinance, Junction to Ambient RTHJamb 2?0 °C/W
  • llfjij|e^^Wajajajajiajfjijfjfjfjfjfjfajij||tef NPN SILICON HIGH-FREQUENCY TRANSISTORS if I*"1_L ¥9 i — ^ t i *•" rw~r LJjl-w MSI STYLE 1 D-*" 0.711 Pinl. Emhltr (TIP 2. BM y ~\\*s

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_L/^ - ^ |_ 90" TO-39 All OiiWltiont in Millimtttrl NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS (TA - 25°C unl«»i otherwiM noted) Characteristic Symbol Min Unit OFF CHARACTERISTICS Collector-Emitter Breekdown Voltage (1C - 4.0 mAdc, Rg- 1.0k ohm, RE - lOOohmi) BF179A BF179B BF179C Emitter-Bat* Breakdown Voltage HE - 100 nAdc, lc = 0) Collector Cutoff Currant (VCB-160Vdc, IE-0) BVcER BVE80 ICBO 160 220 250 5.0 200 Vde Vdc nAdc ON CHARACTERISTICS DC Currant Gain dC - 15 mAdc, VCE - 10 Vdc) High Frequency Collector Emitter Saturation Voltage (lc - 20 mAdc, HL - 10 k ohms, f - 0.5 MHz, Tj = 1 50'C) hFE 'CE(Mt)HF Vdc DYNAMIC CHARACTERISTICS Current-G»m-B»ndwidth Product (lc - 10 mAdc, VCE - 20 Vdc, f - 500 KHz) Short-Circuit Revert* Capacitance I VCE • 20 Vdc, lc • 1 -0 mAdc, f - 1 .0 MHz) Collector-Ban Time Constant (1C * 10 mAdc, VCB " 20 Vdc, f =• 2.5 MHz) Cre 'bb'Cb'c 100 150 1.3 3.5 100 MHz pF