BDY28 NJSEMI | Alldatasheet
Document overview
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Technical content
<^£.mi-(lona\\jLctoi L/^ioaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDY28
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min.)
- Collector-Emitter Saturation Voltage- : VCE(sa,)= 0.6V(Max)@ lc = 2A •.
- High Switching Speed
APPLICATIONS
- Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO lc IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation@Tc=25°C Junction Temperature Storage Temperature VALUE 500 250 87.5 200 -65-200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 2.0 UNIT r/w PIN 1.BASE 2.BU1ITTER 3. COLLECT OR (CASE) TO-3 package V-. t r i i -Jk-D i *— U — * (-L-* "fe~ A B D E H K L N g o V 'T^\\— •$ ^ s -BQ C PL / 1 ? C f nun MIN MAX 3900 2530 7.30 0.90 1,40 2667 8.30 1.10 1,60 10S2 546 11.40 1675 19,40 4.00 3000 430 1350 1705 1962 420 3020 450 u ran t i B ' 1 NJ Serni-Conductors reserves the right to changelest conditions, parameter limits and package dimensions without notiee. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistors BDY28
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VcE(sat) VsE(sat) ICES ICEO IEBO hpE fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product CONDITIONS lc= 50mA; IB= 0 lc= 3mA; IE= 0 lc= 2A; IB= 0.25A lc= 2A; IB= 0.25A VCE= 400V; VBE= 0 VCE= 250V; IB= 0 VEB=10V; I o=0 lc= 2A; VCE= 4V lc= 0.5A; VCE= 15V; f=10MHz MIN 250 500 TYP. MAX 0.6 1.2 1.0 1.0 1.0 100 UNIT V V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time lc= 5A; IB= 1A lc= 5A; IB1= 1A; IB2= -0.5A 0.5 2.0 u s w s Classifications A 15-45 B 30-90 C 75-100