BDY27 NJSEMI | Alldatasheet
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Technical content
^E.mi-Conducto'i <LPiodacti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDY27
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= 200V(Min.)
- Collector-Emitter Saturation Voltage- : VCE(sa.)= 0.6V(Max)@ lc = 2A *
- High Switching Speed
APPLICATIONS
- Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO lc IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation@Tc=25°C Junction Temperature Storage Temperature VALUE 400 200 87.5 200 -65-200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 2.0 UNIT 'C/W PIN 1.BASE 2.B/IITTER 3. COLLECTOR (CASE) TO-3 package t-E V-, f |*-N— | 1 ' -4U-D /H ""N. JK Hi- 4 °L j-H ^ \\XJ ^/ '-ran C ZPL f~^- -V- / 1 0 c f inni DIM MIN MAX A 3900 B 25,30 C 7.30 D 0.90 E 1.40 36.6? 8.30 1.10 1.60 G 1092 H 646 K 11 .40 L 1675 K 1940 Q 400 U 3000 V 430 1350 uos 1962 420 3020 450 u ro^ t , B I NJ Semi-Conductors reserves tFe right to cfiange test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistors BDY27
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VcE(sat) VaE(sat) ICES ICEO IEBO hFE fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage '- Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product CONDITIONS lc= 50mA; IB= 0 lc= 3mA; IE= 0 lc= 2A; IB= 0.25A lc= 2A; IB= 0.25A VCE= 300V; VBE= 0 Vce= 200V; IB= 0 VEB= 10V; lc= 0 lc= 2A; VCE= 4V lc=0.5A;V0E=15V;f=10MHz MIN 200 400 TYP. MAX 0.6 1.2 1.0 1.0 1.0 100 UNIT V V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time lc= 5A; IB= 1A lc=5A; IB1= 1A; IB2= -0.5A 0.5 2.0 v- s u s Classifications A 15-45 B 30-90 C 75-100