BDY26 NJSEMI | Alldatasheet
Document overview
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Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDY26
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= 180V(Min.)
- Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ lc = 2A 4
- High Switching Speed
APPLICATIONS
- Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO lc IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation@Tc=25°C Junction Temperature Storage Temperature VALUE 300 180 87.5 200 -65-200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case UNIT V V V A A W MAX 2.0 UNIT 'CM/
3 PIN
J 1.BASE 1 „_[ 2. Bi/IITTER ^N 3. COLLECT OR (CASE)
2 TO-3 package
-^U-D p-U-* ^-S— < \\^ ^^ M^n C ZPL / « 9 C imn DIM MtN MAX A 3900 B 2530 C 7.3Q D 090 E I 10 5687 8.30 1.10 1,$0 _.Q_ 10,32 H 546 JL. 1V4° L 1675 N 1940 Q 400 U 3000 V 430 1350 iros 1962 420 3020 450 C-K
- BH t , B \\J Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistors BDY26
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VcE(sat) VsE(sat) ICES ICEO IEEO IIFE fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product CONDITIONS lc= 50mA; IB= 0 lc= 3mA; IE= 0 lo= 2A; IB= 0.25A lc= 2A; IB= 0.25A VCE= 250V; VBE= 0 VCE=180V;IB=0 VEB= 10V;IC=0 lc= 2A; VCE= 4V lc=0.5A; VCE=15V;f=10MHz MIN 180 300 TYP. MAX 0.6 1.2 1.0 1.0 1.0 100 UNIT V V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time lc= 5A; IB= 1A lc=5A;lei=1A; IB2=-0.5A 0.5 2.0 u s u s Classifications A 15-45 B 30-90 C 75-100