BDY20 NJSEMI | Alldatasheet
Document overview
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Technical content
fJ. u , O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BDY20
DESCRIPTION
- Excellent Safe Operating Area
- DC Current Gain -hFE=20-70@lc = 4A
- Collector-Emitter Saturation Voltage- :VcE(«,)=1.1V(Max)@lc = 4A
APPLICATIONS
- Designed for general-purpose switching and amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VcBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation@Tc=25°C Junction Temperature Storage Temperature VALUE 100 115 200 -65-200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.52 UNIT
- c/w ifff PIN 1.BASE 2. MITTER 3. COLLECT OR (CAS E) TO-3 package I r A |*-N-*j " I -*IU-Di ~"~TL* /^*T\\— <f Vl^ ^ i t C , ^ / < ?5 c \\ . Him DIM MIN MAX A 3900 B 25.30 C ^.« D 090 E t.40 28.67 8.30 1 10 1.60 6 10,32 H 54S )( it. 40 L 1675 H 1940 Q 400 U 30^0 V *3Q 1350 IT OS 1962 420 3020 4SO sa t B I NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistor BDY20
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-1 VcE(sat)-2 VeE(on) IcEO ICEX IEBO hFE-1 tlFE-2 Is/b fl PARAMETER Collector-Emitter Sustaining Voltage. Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Second Breakdown Collector Current with Base Forward Biased Current Gain-Bandwidth Product CONDITIONS lc=200mA;lB=0 lc= 4A; IB= 0.4A IC=10A;IB=3.3A lc= 4A; VCE= 4V VCE= 30V; IB=0 VCE=100V;VBE(0fo=1.5V VCE= 100V; VBE(0ff)= 1.5V,TC=150'C VEB= 7.0V; lc=0 |C=4A;VCE=4V lc= 10A; VCE=4V VCE= 40V,t= 1.0s,Nonrepetitive lc=0.5A; VCE=10V MIN 2.87 MAX 1.1 3.0 1.5 0.7 1.0 5.0 5.0 UNIT V V V V mA mA mA A MHz