BDX92 NJSEMI | Alldatasheet
Document overview
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Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BDX92/94/96
DESCRIPTION
- Collector Current -lc= -10A
- Collector-Emitter Breakdown Voltage- : V(BR)CEo = -60V(Min)- BDX92 -SOV(Min)- BDX94 -100V(Min)-BDX96;
- Complement to Type BDX91/93/95
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25x:) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDX92 BDX94 BDX96 BDX92 BDX94 BDX96 Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -60 -80 -100 -60 -80 -100 -10 -15 200 -65-200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.94 UNIT "C/W PIN 1.BASE 2.EWIHER 3. COLLECT OR (CASE) TO-3 package VA 1— N- l -JU- — u- /^g~ *~3- TXJ_^ ^—nTj DIM U A B 26 C ? D 0 £ 1 G H J4 11 L 16 N 1f 0 ' u ?c y 4 *l \\ c j -D iPL — * \\ i -^ C /" 1 ITHU HN MAX 3900 30 26.67 «0 8.30 90 1.10 40 1.60 10.92 5.46 ,«0 13, SO 75 1705 ,40 19,62 jOO 4.20 M- ^*™ JO 4.50 1^1 t » 6 t Quality Semi-Conductors
Silicon PNP Power Transistor BDX92/94/96
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat)-1 VcE(sat)-2 VBE(sat)-1 VeE(sat)-2 VBE(on) ICBO ICEO IEBO hpE-1 hFE-2 fi PARAMETER Collector-Emitter Breakdown Voltage BDX92 BDX94 BDX96 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDX92 BDX94 BDX96 BDX92 BDX94 BDX96 Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc=-30mA;lB=0 |c= -3A; IB= -0.3A IC=-5A;IB=-1A lc= -3A; IB= -0.3A IC=-5A;IB=-1A lc= -3A; VCE= -2V VCB= -60V; IE= 0 VCB=-30V;IE=0;TC=150'C VCB= -80V; IE= 0 VCB=-40V; IE=0;TC=150'C VCB=-100V;IE=0 VCB=-50V;IE=0;TC=150°C VCE= -60V; IB= 0 VCE= -80V; IB= 0 VCE=-100V;IB=0 VEB= -5V; lc= 0 lc= -3A; VCE= -2V lc= -5A; VCE= -2V lc=-1A;VCE=-10V MIN -45 -60 -80 TYP. MAX -0.8 -1.0 -1.5 -2.0 -1.4 -0.1 -2.0 -0.1 -2.0 -0.1 -2.0 -0.2 -0.1 UNIT V V V V V V mA mA mA MHz Switching times ton toff Turn-on Time Turn-off Time 1.0 2.0 u s w s