BDX91 NJSEMI | Alldatasheet
Document overview
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Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BDX91/93/95
DESCRIPTION
- Collector Current -lc= 10A
- Collector-Emitter Breakdown Voltage- :V(BR)CEo=60V(Min)-BDX91 80V(Min)- BDX93 100V(Min)-BDX95
- Complement to Type BDX92/94/96
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25<) SYMBOL VCBO VOEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDX91 BDX93 BDX95 BDX91 BDX93 BDX95 Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25-C Junction Temperature Storage Temperature Range VALUE 100 100 200 -65-200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.94 UNIT 'CM/ PIN 1.BASE 1, EMITTER 3. COLLECT OR (CASE) TO-3 package *-, « « I _4U_D .
- — u — • x^l^x. ^7§-— 4 \\^j ^/ J \\ c .' — / ^ 5 c t ^-BH mm DIM M« ! KAX A 3900 B 2530 c ?.® D 0.90 E 1.40 26.6? 8.30 1 10 1.80 5 1 0 92 H 54S K 1MO L 1675 N 1940 ^ 400 U 3000 V 430 1350 1705 1962 420 3020 450 t-K t B I Quality Semi-Conductors
Silicon NPN Power Transistor BDX91/93/95
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified SYMBOL V(BR)CEO VcE(sat)-1 VcE(sat)-2 VeE(sat)-1 VeE(sat)-2 VeE(on) ICBO ICEO IEBO hpE-1 hFE-2 fi PARAMETER Collector-Emitter Breakdown Voltage BDX91 BDX93 BDX95 : Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDX91 BDX93 BDX95 BDX91 BDX93 BDX95 Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 30mA;le=0 lc= 3A; IB= 0.3A lc= 5A; IB= 1A lc= 3A; IB= 0.3A lc= 5A; IB= 1A lc= 3A; VCE= 2V VCB= 60V; IE= 0 VCB=30V;lE=0;Tc=150'C VCB= 80V; IE= 0 VcB=40V;lE=0;Tc=150'C VCB=100V;IE=0 VcB=50V;lE=0;Tc=150°C VCE= 60V; I B= 0 VCE= 80V;IB= 0 VCE=100V;IB=0 VEB= 5V; lc=0 lc= 3A; VCE= 2V lc= 5A; Vce= 2V lc= 1A;VCE=10V MIN TYP. MAX 0.8 1.0 1.5 2.0 1.4 0.1 2.0 0.1 2.0 0.1 2.0 0.2 0.1 UNIT V V V V V V mA mA mA MHz Switching times 'on toff Turn-on Time Turn-off Time lc= 3A; IB1= -IB2= 0.3A 1.0 2.0 u s u s