BDX88B

BDX88 NJSEMI | Alldatasheet

Document overview

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Technical content

\\J~)ioau.cti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor BDX88/A/B/C

DESCRIPTION

• High DC Current Gain- : hFE= 750(Min)@ lc= -6A
• Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C
• Complement to Type BDX87/A/B/C

APPLICATIONS

• Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=2SC) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDX88 BDX88A BDX88B BDX88C BDX88 BDX88A BDX88B BDX88C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ Tc=25"C Junction Temperature Storage Temperature Range VALUE -45 -60 -80 -100 -45 -60 -80 -100 -12 -18 -200 120 200 -65-200 UNIT V V V A A mA W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.45 UNIT °c/w PIN 1.BASE 2. EMITTER 3. COLLECT OR (CASE) TO-3 package
• N-"1 -»IU-o — U JT G B t DIM A B c D E H K L H q U y nun MM MAX 3900 2530 780 090 f 40 26.67 8.30 1 10 1.60 10,92 546 11.40 1675 19.40 400 JC.QO 4. 3Q 13.50 1705 1962 420 3020 450 Quality Semi-Conductors

Silicon PNP Darlington Power Transistor BDX88/A/B/C

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcEfsatM VcE(sat)-2 VaE(sat) VsE(on) ICBO ICEO IEBO hpE-1 hFE-2 hpE-3 PARAMETER Collector-Emitter Sustaining Voltage BDX88 BDX88A; BDX88B BDX88C Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDX88 BDX88A BDX88B BDX88C BDX88 BDX88A BDX88B BDX88C Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS !„— innmA IB— n lc= -6A; IB= -24mA lc=-12A; IB= -120mA IC=-12A;IB= -120mA |c= -6A; VCE= -3V VCB= -45V; IE= 0 VCB=-45V; IE=0;TC=150°C VCB= -60V; IE= 0 VCB=-60V;lE=0;Tc=150°C VOB= -80V; IE= 0 VCB=-80V; lE=0;Tc=150r VCB=-100V; I6=0 VCB=-100V; IE=0;TC=150'C VCE= -22V; IB= 0 VCE= -30V; IB= 0 VCE= -40V; IB= 0 VCE= -50V; IB= 0 VEB= -5V; lc= 0 lc= -5A; VCE= -3V |c= _6A; VCE= -3V lc=-12A; VCE=-3V MIN -45 -60 -80 -100 1000 750 100 TYP. MAX -2.0 -3.0 -4.0 -2.8 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -1.0 -2.0 18000 UNIT V V V V V mA mA mA