BDX87 NJSEMI | Alldatasheet
Document overview
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Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlington Power Transistor BDX87/A/B/C
DESCRIPTION
- High DC Current Gain- : hFE= 750(Min)@ lc= 6A
- Collector-Emitter Sustaining Voltage- : VCEO(sus)= 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C
- Complement to Type BDX88/A/B/C
APPLICATIONS
- Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=251) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDX87 BDX87A BDX87B BDX87C BDX87 BDX87A BDX87B BDX87C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE 100 100 200 120 200 -65-200 UNIT V V V A A mA W THERMAL CHARACTERISTICS SYMBOL Rth \\-c PARAMETER Thermal Resistance.Junction to Case MAX 1.45 UNIT "CM/
1 DIM
1— ^f— ] 1.BASE i "ik S.BulinER I [ 3. COLLECT OR (CASE) l,2 TO-3 package i I I r |^- t DIM A B c D E H L N g V V I ^I^DJPL - u— * ^ '1^\\ I -J-— ^J c ?^s f 1^] inin MIN UA3I 3900 25.30 26.67 7.90 8.30 0.90 1.10 f .40 1 .50 10.92 S4S 1140 1350 1675 17.05 1940 19*2 4.00 420 3999 ^^ 430 450
- ran t B I Quality Semi-Conductors
Silicon NPN Darlington Power Transistor BDX87/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specif led SYMBOL VcEO(SUS) VcE(sat)-1 VcE(sat)-2 VeE(sat) VsE(on) ICBO I CEO IEBO hpE-1 hFE-2 hFE-3 PARAMETER Collector-Emitter Sustaining Voltage BDX87 BDX87A BDX87B BDX87C Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDX87 BDX87A BDX87B BDX87C BDX87 BDX87A BDX87B BDX87C Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS r_ inrimA- l~— n lc= 6A; IB= 24mA lc= 12A; IB= 120mA IC=12A;IB= 120mA lc= 6A; VCE= 3V VCB= 45V; IE= 0 VcB=45V;lE=0;Tc=150'C VCa= 60V; IE= 0 VcB=60V;lE=0;Tc=150°C VCB= 80V; IE= 0 VCB=80V;lE=0;Tc=150-C VCB= 100V; IE=0 VCB= 100V;IE=0;TC=150'C VCE= 22V; la= 0 VCE= 30V; IB= 0 VCE= 40V; IB= 0 VCE= 50V; IB= 0 VEB= 5V; lc= 0 lc= 5A; VCE= 3V lc= 6A; VCE= 3V lc=12A;VCE=3V MIN 100 1000 750 100 TYP. MAX 2.0 3.0 4.0 2.8 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 1.0 2.0 18000 UNIT V V V V V mA mA mA