BDX86C

BDX86 NJSEMI | Alldatasheet

Document overview

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Technical content

, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor BDX86/A/B/C

DESCRIPTION

• High DC Current Gain- : hFE= 750(Min)@ lc= -3A
• Collector-Emitter Sustaining Voltage- : VCEO(sus)= -45V(Min)- BDX86; -60V(Min)- BDX86A -SOV(Min)- BDX86B; -100V(Min)- BDX86C
• Complement to Type BDX85/A/B/C

APPLICATIONS

• Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25x:) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDX86 BDX86A BDX86B BDX86C BDX86 BDX86A BDX86B BDX86C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -45 -60 -80 -100 -45 -60 -80 -100 -10 -15 -100 100 200 -65-200 UNIT V V V A A mA W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.75 UNIT "CM/ PIN 1.BASE 2. EMITTER 3. COLLECT OR (CASE) TO-3 package JT CUM A B c D H K L N g u V iran NUN MAX 39 XO 25,30 7.80 0.90 1.40 26.67 8.30 1 10 1.60 10.92 546 11 40 16.75 1940 400 3000 430 13.50 1F.05 1962 420 3020 450 Quality Semi-Conductors

Silicon PNP Darlington Power Transistor BDX86/A/B/C

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-i \\/CE(sat)-2 VsE(sat) VeE(on) ICBO ICEO IEBO hpE-1 hFE-2 hpE-3 PARAMETER Collector-Emitter Sustaining Voltage BDX86 BDX86A BDX86B BDX86C Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDX86 BDX86A BDX86B BDX86C BDX86 BDX86A BDX86B BDX86C Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS i~— "i nrimA- i — n lc=-4A;lB=-16mA lc= -8A; IB= -40mA |c= -8A; IB= -80mA lc= -4A; VCE= -3V VCB= -45V; IE= 0 VCB=-45VlE=0;Tc=150r VCB= -60V; IE= 0 Vcs=-60V; IE=0;TC=150'C VCB= -80V; IE= 0 VCB=-80V; IE=0;TC=150'C Vca=-100V;lE=0 VCB= -100V; IE=0;TC= 150 "C VCE= -22V; IB= 0 VCE= -30V; IB= 0 VCE= -40V; IB= 0 VC6= -50V; IB= 0 VEB= -5V; lc= 0 lc= -3A; VCE= -3V lc= -4A; VCE= -3V lc= -8A; VGE= -4V MIN -45 -60 -80 -100 1000 750 200 TYP. MAX -2.0 -4.0 -4.0 -2.8 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -1.0 -2.0 18000 UNIT V V V V V mA mA mA