BDX85A

BDX85 NJSEMI | Alldatasheet

Document overview

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Technical content

, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlington Power Transistor BDX85/A/B/C

DESCRIPTION

• High DC Current Gain- : hFE= 750(Min)@ lc= 3A
• Collector-Emitter Sustaining Voltage- : VCEo(sus)= 45V(Min)- BDX85; 60V(Min)- BDX85A SOV(Min)- BDX85B; 100V(Min)- BDX85C
• Complement to Type BDX86/A/B/C

APPLICATIONS

• Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25C) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDX85 BDX85A BDX85B BDX85C BDX85 BDX85A BDX85B BDX85C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 100 100 100 100 200 -65-200 UNIT V V V A A mA W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.75 UNIT 'C/W PIN 1.BASE 2.BU1inER 3. COLLECT OR (CASE) TO-3 package r-N-i ' ' r I IK UL \\ B -? 1 DIM A B C D E H K L N U V 11)111 »««.» PPHI MAX 3900 25,30 7.30 0.90 t.40 26.67 8.30 1,10 1,60 10.92 546 11 40 1675 1940 400 Xi 00 4,30 13,50 1705 1962 420
• »ar *5Q Quality Semi-Conductors

Silicon NPN Darlington Power Transistor BDX85/A/B/C

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-i VcE(sat)-2 VBE(sat) VBE(on) ICBO ICEO IEBO hpE-1 hFE-2 hFE-3 PARAMETER Collector-Emitter Sustaining Voltage BDX85 BDX85A BDX85B BDX85C Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDX85 BDX85A BDX85B BDX85C BDX85 BDX85A BDX85B BDX85C Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS |C=4A; IB= 16mA lc= 8A; IB= 40mA lc= 8A; IB= 80mA lc= 4A; VCE= 3V VCB= 45V; IE= 0 VcB=45V;lE=0;Tc=150r Vca= 60V; IE= 0 VCB=60V;lE=0;Tc=150'C VCB= 80V; IE= 0 VCB=80V;lE=0;Tc=150'C VCB=100V;le=0 VCB=100V;lE=0;Tc=150'C VCE= 22V; IB= 0 VCE= 30V; IB= 0 VCE= 40V; IB= 0 VCE=50V;-|B=0 VEB= 5V; lc= 0 lc= 3A; VCE= 3V lc= 4A; VCE= 3V lc= 8A; VCE= 4V MIN 100 1000 750 200 TYP. MAX 2.0 4.0 4.0 2.8 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 1.0 2.0 18000 UNIT V V V V V mA mA mA