BDX85A

2N6674 CENTRAL | Alldatasheet

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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6674 2N6675 UNITS Collector-Emitter Voltage V CEV 450 650 V Collector-Emitter Voltage V CEO 300 400 V Emitter-Base Voltage V EBO 7.0 V Continuous Collector Current I C 15 A Peak Collector Current I CM 20 A Continuous Base Current I B 5.0 A Power Dissipation P D 175 W Operating and Storage Junction Temperature T J, Tstg -65 to +200 °C Thermal Resistance ΘJC 1.0 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEV V CE=Rated VCEV, VBE=1.5V 0.1 mA ICEV V CE=Rated VCEV, VBE=1.5V, TC=100°C 1.0 mA IEBO V EB=7.0V 2.0 mA BVCEO I C=200mA (2N6674) 300 V BVCEO I C=200mA (2N6675) 400 V VCE(SAT) I C=10A, IB=2.0A 1.0 V VCE(SAT) I C=10A, IB=2.0A, TC=100°C 2.0 V VCE(SAT) I C=15A, IB=5.0A 5.0 V VBE(SAT) I C =10A, IB=2.0A 1.5 V hFE V CE=2.0V, IC=10A 8.0 20 IS/b V CE=30V, IC=5.9A 1.0 s IS/b V CE=100V, IC=250mA 1.0 s hfe V CE=10V, IC=1.0A, f=5.0MHz 3.0 10 ft V CE=10V, IC=1.0A, f=5.0MHz 15 50 MHz Cob V CB=10V, IE=0, f=100kHz 150 500 pF TO-3 CASE R1 (10-March 2011) www.centralsemi.com

ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS td* V EB=6.0V, IC=10A, IB=2.0A 0.1 µs tr* V EB=6.0V, IC=10A, IB=2.0A 0.6 µs tr* V EB=6.0V, IC=10A, IB=2.0A, TC=100°C 1.0 µs ts* V EB=6.0V, IC=10A, IB1=IB2=2.0A 2.5 µs ts* V EB=6.0V, IC=10A, IB1=IB2=2.0A, TC=100°C 4.0 µs tf* V EB=6.0V, IC=10A, IB1=IB2=2.0A 0.5 µs tf* V EB=6.0V, IC=10A, IB1=IB2=2.0A, TC=100°C 1.0 µs * VCC=135V, tp=20µs 2N6674 2N6675 NPN SILICON POWER TRANSISTOR TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER www.centralsemi.com R1 (10-March 2011)