BDX83 NJSEMI | Alldatasheet
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Technical content
'Isiizu ^s-mi-donduckot ^Pioducti, One. CX J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDX83/A/B/C
DESCRIPTION
- High DC Current Gain- : hFE= 1000(Min)@lc=5A
- Collector-Emitter Sustaining Voltage- : VCEO(sus)= 45V(Min)- BDX83; 60V(Min)- BDX83A 80V(Min)- BDX83B; 100V(Min)- BDX83C
APPLICATIONS
- Power switching
- Hammer drivers
- Series and shunt regulators
- Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDX83 BDX83A BDX83B BDX83C BDX83 BDX83A BDX83B BDX83C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 100 100 250 125 200 -65-200 UNIT V V V A A mA W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.4 UNIT °c/w PIU ' — *w — ' HI -»A/v- 1.BASE ^ "^ i I.aiiTTER I [ 3. COLLECT OR (CASE) 1,2 TO-3 package \\ 1 c I ! -4U-D JPL h—u-H V~ t"-L-*l / "X )/* DIM A B C D E H K L H Q U V d)^N / ^ %-$ c j^^/ 1 -ga Mill) tm MAX 3900 25.30 36.67 7,80 8.30 0.90 MO t .40 1 .60 1092 S46 1140 1350 1675 17X15 1940 1962 4.00 420 30.00 3020 *30 450 t , B Quality Semi-Conductors
Silicon NPN Darlington Power Transistor BDX83/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(OH)-I VBE(on)-2 ICEV ICEO IEBO HFE--I HpE-2 hFE-3 PARAMETER Collector-Emitter Sustaining Voltage BDX83 BDX83A BDX83B BDX83C Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current BDX83 BDX83A BDX83B BDX83C BDX83 BDX83A BDX83B BDX83C Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS lc= 100mA; IB=0 lc= 5A; IB= 10mA lc= 5A; VCE= 3V lc=10A;VCE=3V VCE= 45V; VBE= -1.5V VCE= 45V; VBE= -1 .5V; Tc= 1 50'C VCE= 60V; VBE= -1.5V VCE= 60V; VBE= -1.5V; Tc= 150'C VCE= 80V; VBE= -1.5V VCE= 80V; VBE= -1 .5V; Tc= 1 50 "C VCE= 100V;VaE=-1.5V VCE= 100V; VBE= -1.5V; Tc= 150'C VCE= 20V; IB=0 VCE= 30V; IB=0 VCE= 40V; IB=0 VCE= 50V; |B=0 VEB= 5V; lc=0 lc= 1A; VCE= 3V lc= 5A; VCE= 3V lc=10A;VCE=3V MIN 100 750 1000 250 TYP. MAX 2.0 2.8 4.5 0.5 3.0 r~0.5 3.0 0.5 3.0 0.5 3.0 1.0 5.0 UNIT V V V V mA mA mA