BDX78 NJSEMI | Alldatasheet

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Technical content

, L/ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BDX78

DESCRIPTION

  • Collector-Emitter Breakdown Voltage- : V(BR)CEo=-80V(Min)
  • Complement to Type BDX77

APPLICATIONS

  • Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4 Q or 8 Q load. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM ICSM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak tp=S 1 0ms Collector Current-Peak tpsS2ms Base Current Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -100 -80 -12 -25 150 -65-150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.08 UNIT
  • CM/ °C/W .. ,-s, 2 V i . PIN l.BASE 1 ; ! J. COLLECTOR !, 1 3. EMITTER t 2 3 TO-220C package i U i i L
  • • B H .» 3\\^y c K -*— c r M!« n rr DIN A B C D F G H J K L Cl R s U V mm L M1N 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 H f \\I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conduclors is believed to be both accurate and reliable at the time of eoi going to press. However, NJ Semi-C'ondtictors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Power Transistor BDX78

ELECTRICAL CHARACTERISTICS

TC=25*C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat)-1 VcE(sat)-2 VBE(sat) VsE(on) ICEO ICBO IEBO hFE fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc=-0.2A;la=0 lc=-1mA;lE=0 lE=-1mA;lc=0 lc= -3A; IB= -0.3A lc= -6A; IB= -0.6A lc= -6A; IB= -0.6A lc=-3A;VCE=-2V VCE= -30V; IB= 0 VCB=-40V;lE=0;Tj=150t: VEB= -5V; lc=0 lc=-1A; VCE=-2V lc= -0.3A ; VCE= -3V, ftest= 1 .0MHz MIN -80 -100 7.0 MAX -1.0 -1.5 -2.0 -1.5 -0.2 -1.0 -0.5 UNIT V V V V V V V mA mA mA MHz Switching Times ton toff Turn-On Time Turn-Off Time P S li S