BDX77 NJSEMI | Alldatasheet
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Technical content
^PtoaucU, (Jnc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDX77
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo = 80V(Min)
- Complement to Type BDX78
APPLICATIONS
- Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4 n or 8 Q load. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO Vceo VEBO Ic ICM ICSM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak tp^ 1 0ms Collector Current-Peak tps=;2ms Base Current Collector Power Dissipation @ TC=25-C Junction Temperature Storage Temperature Range VALUE 100 150 -65-150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.08 UNIT °CI\\N °C/W PIN i '• >. I I 1 2 3 1.BASE 2. COLLECTOR 3- EMITTER TO-220C package j til ; i -. B H -« v «H x'~' j-crl MICOV * H ' , T J K T H c if. !]! I I I DIN A B C D F G H J K L Q R S u V soi" mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 r — jsoo- NJ Semi-Conductors reserves the right to ehange test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in ils use. NJ Semi-Conductors encourages customers to verily that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistor BDX77
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat)-1 Vc6(sat)-2 VsE(sat) VBE(on) ICEO ICBO IEBO hFE fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS IC=0.2A;IB=0 lc= 1mA;lE=0 |E=1mA;lc=0 lc= 3A; IB= 0.3A IG= 6A; IB= 0.6A lc= 6A; IB= 0.6A lc=3A;VCE=2V VCE= 30V; IB= 0 VCB=40V;lE=0;Tj=150-C VEB= 5V; lc=0 |C=1A;VCE=2V lc= 0.3A; VCE= 3V f,est= 1.0MHz MIN 100 7.0 MAX 1.0 1.5 2.0 1.5 0.2 1.0 0.5 UNIT V V V V V V V mA mA mA MHz Switching Times *on toff Turn-On Time Turn-Off Time I — OA- I — I — l"l OA u s u s