BDX69A SEME-LAB | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
200°C –65 to 200°C 0.875°C / W BDX69 A BDX69A BDX69B BDX69C LAB SEME Prelim. 1/95Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. NPN DARLINGTON POWER TRANSISTOR NPN Darlington transistors for audio output stages and general amplifier and switching applications. PNP complements are: BDX68, BDX68A, BDX68B, BDX68C. VCBO Collector – Base Voltage (Open Emitter) VCEO Collector – Emitter Voltage (Open Base) VEBO Emitter – Base Voltage (Open Collector) IC Collector Current ICM Collector Current (Peak) IB Base Current Ptot Total Power Dissipation at TMB = 25°C TJ Maximum Junction Temperature TSTG Storage Junction Temperature R /G71 J-MB Thermal Resistance, Junction to Mounting Base. MECHANICAL DATA Dimensions in mm ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Case is collector. BDX BDX BDX BDX 69 69A 69B 69C BE 4.2 26.6 max. 39.5 max. 30.1 16.9 10.9 2.5 /G31/G2e /G30 12.8 20.3 max. 9.0 max.
Prelim. 1/95Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Parameter Test Conditions Min. Typ. Max. Units ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise stated) ICBO Collector Cut-off Current ICEO Collector Cut-off Current IEBO Emitter Cut-off Current hFE* D.C. Current Gain VBE* Base – Emitter Voltage VCEsat* Collector – Emitter Saturation Voltage C c Collector Capacitance fhfe Cut-off Frequency /GEF hfe/GEF Small Signal Current Gain VF Diode, Forward Voltage ton Turn–on Time toff Turn–off Time IE = 0 V CB = VCBOmax IE = 0 V CB = ½ VCBOmax TJ = 200°C IB = 0 V CE = ½ VCEOmax IC = 0 V EB = 5V IC = 5A V CE = 3V IC = 20A V CE = 3V IC = 30A V CE = 3V IC = 20A V CE = 3V IC = 20A I B = 80mA IE = Ie = 0 V CB = 10V f = 1MHz I C = 10A V CE = 3V IC = 10A V CE = 3V f = 1MHz I F = 20A ICon = 20A IBon = –IBoff= 80mA 3000 1000 4000 2.5 600 2.5 3.5 mA mA mA V V pF kHz V /G6D s * Pulse Test: tp < 300/G6D s, /G64 < 2%