BDX67 NJSEMI | Alldatasheet

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Technical content

, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 BDX67/A/B/C

DESCRIPTION

  • High DC Current Gain- : hFE=1000(Min)@lc=10A
  • Low Saturation Voltage
  • Complement to Type BDX66/A/B/C

APPLICATIONS

  • Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25x:) SYMBOL VCBO VCEO Veeo Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE 100 120 140 100 120 250 150 200 -65-200 UNIT V V V A A mA W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.17 UNIT
  • c/w PIN 1.BASE REMITTER 3. COLLECT OR (CASE) TO-3 package „ A. i -JU-D IPL — U IK r^fe j t DIM A B D H K L H Q U v nun MIN MAX 3300 25.30 7.80 0.90 140 26.67 8.30 1.10 1,60 10.92 546 11 40 1675 1940 4.00 30.00 4.30 13.50 1705 19.62 420 "3020" 450 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be hoth accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility lor any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon NPN Darlington Power Transistor BDX67/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(on) ICBO ICEO IEBO hpE-1 hFE-2 hFE-3 VECF COB PARAMETER Collector-Emitter Sustaining Voltage BDX67 BDX67A BDX67B BDX67C Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDX67 BDX67A BDX67B BDX67C Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain C-E Diode Forward Voltage Output Capacitance CONDITIONS I,— -IfirirnA • I — 95mH lc=10A;lB=40mA lc=10A;VCE=3V VCB= 80V; IE= 0 VcB=80V;lE=0;Tc=150'C VCB= 100V;IE=0 Vce=100V;lE=0;Tc=1506C VCB=120V;IE=0 VCB=120V;lE=0;Tc=150'C VCB= 140V; IE= 0 VcB=140V;lE=0;Tc=150'C Vce= 1/2VCEo(Max); IB=0 VEB= 5V; lc=0 lc=1A;VCE=3V lc= 10A; VCE=3V lc=16A;VCE=3V !F= 10A lE=0;VcB=10V,ftes,= 1.0MHz MIN 100 120 1000 TYP. 5200 4000 2.5 300 MAX 2.0 2.5 1.0 5.0 1.0 5.0 1.0 5.0 1.0 5.0 1.0 5.0 UNIT V V V mA mA mA V pF