BDX66 NJSEMI | Alldatasheet

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Technical content

\\/£lV (J.£11£U <^>£,mi-(-on.auetoi J loaucti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDX66/A/B/C

DESCRIPTION

  • Collector Current -lc= -16A
  • High DC Current Gain-hFE= 1000(Min)@ IC=-10A
  • Complement to Type BDX67/A/B/C

APPLICATIONS

  • Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25r> SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -80 -100 -120 -140 -60 -80 -100 -120 -16 -20 -0.25 150 200 -65-200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.17 UNIT "CM/ I PIN 1.BASE JL 2. EMITTER 3. COLLECT OR (CASE)

2 TO-3 package

. A. !PL A± f G B ~f I DIM A B c D E H K L N g u v nun MM MAX 3900 2S.SJ 7.80 0.90 MO 26 &7 8.30 1.10 1.60 1092 546 11.40 1675 1940 400 ».oo 4.30 13.50 1705 19.62 420 3020 450 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. I knvever, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verily that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Darlington Power Transistor BDX66/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(on) VECF ICEO ICBO ICBO IEBO hpE-1 hFE-2 hFE-3 COB PARAMETER Collector-Emitter Sustaining Voltage BDX66 BDX66A BDX66B ' BDX66C Collector-Emitter Saturation Voltage Base-Emitter On Voltage C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current BDX66 BDX66A BDX66B BDX66C Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance CONDITIONS lc=-10A; lB=-40mA lc=-10A; VCE=-3V IF=-10A VCE= /2VcEOmax; !B= 0 VCB= -40V;IE= 0;Tj= 200"C Vca= -50V;IE= 0;Tj= 200'C VCB= -60V; IE= 0;Tj= 200 "C VOB= -70V;IE= 0;Tj= 200'C VCB= VcBOmax;lE= 0 VEB= -5V; lc=0 lc=-1A; VCE=-3V lc=-10A; VCE=-3V lc=-16A;VCE=-3V IE=0; VCB=-10V;ftest=1MHz MIN -60 -80 -100 -120 1000 TYP. 2000 1000 300 MAX -2.5 UNIT V V V V mA mA rnA mA pF Switching times ton toff Turn-on Time Turn-off Time |_— 1 flA- In* — Ir, AfimA 3.5 u s P S