BDX65 NJSEMI | Alldatasheet

Document overview

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Technical content

i, U na, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDX65/A/B/C

DESCRIPTION

  • Collector Current -lc= 12A
  • High DC Current Gain-hFE= 1000(Min)@ lc= 5A
  • Complement to Type BDX64/A/B/C

APPLICATIONS

  • Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25-Q SYMBOL VCBO Vceo VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 100 120 140 100 120 0.2 117 200 -65-200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.5 UNIT "C/W PIN 1.BASE 3. COLLECT OR (CASE) TO-3 package -•4U-D 2PL — U '-JT\\ B -T I DIM A C D E H K L N g u V inin MW MAX 39.00 2530 7.80 0.90 f.40 26.67 830 1 10 1.60 10.92 546 11 40 1675 19.40 4.00 30.00 4 30 13,50 iros 19.62 420 3020 4$y NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon NPN Darlington Power Transistor BDX65/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(on) VECF ICEO ICBO IEBO hpE-1 hFE-2 hpE-3 COB PARAMETER Collector-Emitter Sustaining Voltage BDX65 BDX65A BDX65B BDX65C Collector-Emitter Saturation Voltage Base-Emitter On Voltage C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance CONDITIONS 1 — 1 fiflm A -I — fl lc= 5A; IB= 20mA lc=5A;VCE=3V IF=5A VCE= /jVcEOmax! le= 0 VCB= VCEOmax;lE= 0 VCB= 1/2VCBoma*;lE= 0;Tj= 200'C VEB= 5V; lc=0 lc=1A;VCE=3V lc=5A;VCE=3V lc= 12A; VGE=3V IE=0; VCB=10V;ftest=1MHz MIN 100 120 1000 TYP. 1.2 3300 3700 200 MAX 2.5 0.2 0.4 UNIT V V V V mA mA mA pF Switching times ton toff Turn-on Time Turn-off Time 1 — £A- 1 — 1 — OfimA p s u s