BDX63 TTELEC | Alldatasheet
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DARLINGTON POWER TRANSISTOR BDX63 / BDX63A / BDX63B / BDX63C Hermetic TO3 Metal Package Ideally Suited for General Purpose Switching and Amplifier Applications Screening Options Available Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number: Issue: Page: 10935 1 of 3 Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) BDX63 BDX63A BDX63B BDX63C VCEO Drain – Source Voltage 60V 80V 100V 120V VCBO Gate – Source Voltage 80V 100V 120V 140V VEBO Continuous Drain Current, Per Device 5V IC Collector Current 8A ICM Collector Current (peak) 12A IB Base Current 150mA Ptot Total Power Dissipation @ TC = 25°C 90W TJ Junction Temperature Range -55 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters Max. Units RθJC Thermal Resistance, Junction To Case 1.94 °C/W
DARLINGTON POWER TRANSISTOR BDX63 / BDX63A / BDX63B / BDX63C Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number: Issue: Page: 10935 2 of 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ Max. Units ICBO Collector – Base Cut-Off Current IE = 0 VCB = VCEOmax 0.2 mA IE = 0 VCB = ½VCBOmax
2 TA = 150°C
ICEO Collector – Emitter Cut-Off Current IB = 0 VCE = ½VCEOmax 0.5 IEBO Emitter – Base Cut-Off Current IC = 0 VEB = 5V 5 hFE (1) DC Current Gain IC = 0.5A VCE = 3V 1475 - IC = 3A VCE = 3V 1000 IC = 8A VCE = 3V 5200 VBE (1) Base – Emitter Voltage IC = 3A VCE = 3V 2.5 V VCE(sat) Collector – Emitter Saturation Voltage IC = 3A IB = 12mA 2 VF Diode, Forward Voltage IF = 3A 0.86 DYNAMIC CHARACTERISTICS COBO Output Capacitance IE = 0 VCB = 10V 150 pF f = 1.0MHz fhfe (2) Cut-Off Frequency IC = 3A VCE = 3V 100 kHz |hfe|(2) Small Signal Current Gain IC = 3A VCE = 3V 100 - f = 1.0MHz Notes (1) Pulse Width ≤ 380us, δ ≤ 2% (2) Not a Production Test, By Design Only
DARLINGTON POWER TRANSISTOR BDX63 / BDX63A / BDX63B / BDX63C Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: Fax: +44 (0) 1455 556565 +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number: Issue: Page: 10935 3 of 3 C E B Ω Ω