BDX63 NJSEMI | Alldatasheet

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Technical content

, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDX63/A/B/C

DESCRIPTION

  • Collector Current -lc= 8A
  • High DC Current Gain-hF£= 1000(Min)@ lc= 3A
  • Complement to Type BDX62/A/B/C

APPLICATIONS

  • Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 100 120 140 100 120 0.15 200 -65-200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.94 UNIT 'CM/ PIN 1.BASE 2. EMITTER 3. COLLECT OR (CASE) TO-3 package -*4U-D ?PL I DIM A t D E G H K L N g u v Him MM MAX 39)00 26.30 7.80 0.90 t 40 26.67 S.30 1.10 1 eo 1093 546 11 40 1675 1940 400 3*9 -W 4.30 1350 1705 19.62 420 3020 4 50 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon NPN Darlington Power Transistor BDX63/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified SYMBOL VCEO(SUS) VcE(sat) VsE(on) VECF ICEO ICBO IEBO hpE-1 hFE-2 hFE-3 COB PARAMETER Collector-Emitter Sustaining Voltage BDX63 BDX63A ; BDX63B BDX63C Collector-Emitter Saturation Voltage Base-Emitter On Voltage C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance CONDITIONS I — Ifinm A -1 — fl lc=3A;lB=12mA lc=3A; VCE=3V IF=3A VCE- /sVcEOmaxI |B= 0 VCB= VcEOmax;lE= 0 VCB= 1/2VCBOmax;lE= 0;Tj= 200/C VEB= 5V; lc=0 lc= 0.5A ; VCE= 3V lc= 3A ; VCE= 3V lc= 8A ; VCE= 3V lE=0;VCB=10V;f,est=1MHz MIN 100 120 1000 TYP. 1.2 2500 2600 100 MAX 2.5 0.2 0.2 UNIT V V V V mA mA mA PF Switching times ton 'off Turn-on Time Turn-off Time 0.5 p s ^ s