BDX62

BDX62 NJSEMI | Alldatasheet

Document overview

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Technical content

, D nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDX62/A/B/C

DESCRIPTION

• Collector Current -lc= -8A
• High DC Current Gain-hFE= 1000(Min)@ lc= -3A
• Complement to Type BDX63/A/B/C

APPLICATIONS

• Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VGBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -80 -100 -120 -140 -60 -80 -100 -120 -12 -0.15 200 -65-200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.94 UNIT "CM/ 1 V* -iTfff, . i . ,V.-. 1 P' =*2 PIN 1.BASE 2.BUIITTER 3. COLLECT OR (CASE) TO-3 package ~*tU-0 2 PL — U- I -t t G B DIM A B c D E _s_ H K L N U V inin MM MAX 3900 25.30 7.80 0.90 1.40 26.67 8.30 1 10 1.60 1092 546 11.40 1675 19.40 4.00 30 .pp 4.30 13.50 1705 19.62 420 3020 450 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Darlington Power Transistor BDX62/A/B/C

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(on) ICEO ICBO ICBO IEBO hpE-1 hFE-2 hFE-3 COB PARAMETER Collector-Emitter Sustaining Voltage BDX62 BDX62A BDX62B BDX62C Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current BDX62 BDX62A BDX62B BDX62C Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance CONDITIONS lc=-100mA;lB=0 lc=-3A;lB=-12mA lc= -3A ; VCE= -3V VCE= V2VcEo; le= 0 VCB= VcBOmaxjlE11 0 VCB= -40V;IE= 0;Tj= 200 "C VCB= -50V;IE= 0;Tj= 200 'C VCB= -60V; IE= 0;Tj= 200 'C VCB= -70V; IE= 0;Tj= 200 r VEB= -5V; lc=0 lc= -0.5A ; VCE= -3V lc= -3A ; VCE= -3V lc=-8A;V0E=-3V |E=0;VCB=-10V;ftest=1MHz MIN -60 -80 -100 -120 1000 TYP. 1500 750 100 MAX -2.5 -0.2 -0.2 UNIT V V V mA mA mA mA PF Switching times ton toff Turn-on Time Turn-off Time lc=-3A; lBi=-lB2=-12mA 0.5 2.5 u s |i S