BDX54 NJSEMI | Alldatasheet
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Technical content
, Li ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS ...designed for general-purpose amplifier and low speed switching
applications
FEATURES: * Collector-Emitter Sustaining Vottage- VCR»u«i" "*5 V (Mln) - BDXS3.BDXS4 = 60 V (Mln) - BDX53A.BDX54A = 80 V (Mln) - BDX53B.BOX54B = 100 V(Min) - BDX53C.BDX54C * Monolithic Construction with Built-in Base-Emitter Shunt Resistor MAXIMUM RATINGS Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Peak Base Current Total Power Dissipation eTc=25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol Veto Vcao VEBO 'CM IB PD TJ-TSTO BDXS3 BDXS3A BDX64 BDX84A 45 60 45 60 BDXS3B BDX54B BDXS3C BDXS4C 100 100 5.0 8.0 0.2 0.48 -65 to +150 Unit V V V A A W W/°C THERMAL CHARACTERISTICS Ch airflctttriSuc Thermal Resistance Junction to Case Symbol Rejc Max 2.08 Unit °C/W FIGURE-1 POWER DERATING * 10 Tc , 100 125 190 NPN PNP BDX53 BDX54 BDX53A BDX54A BDX53B BDX54B BDX53C BDXS4C
8 AMPERE
60 WATTS
PIN 1.1 2- COLLECTOR 4.COLLECTOR(CASB) DIM A B C E F G H J K L M O MILLIMETERS MIN 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2.20 0.33 2.48 3.70 MAX 15.31 1042 6.52 14.62 4.07 3.66 1.36 0.96 4.86 1.38 297 0.55 258 3.90 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
BDX53,A,B,C NPN I BDX54,A,B,C PNP
ELECTRICAL CHARACTERISTICS
( Tc » 25°C unless otherwise noted ) CharMtteristfc Symbol Mln Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Vortafle(1) BDX53, BDXS4 ( lc= 100 mA, l_- 0 ) BDX53A, BDX54A BDX53B, BDX54B BDX53C, BDX54C Collector Cutoff Current ( VC1- 22 V, I.- 0 ) BDXS3, BDX54 { Vci= 30 V, I.- 0 ) BDX53A, BDX54A ( VC1= 40 V, l,» 0 ) BDX53B, BDX54B ( Vel= 50 V, l»= 0 ) BDX53C, BDX54C Collector-Base Cutoff Current (VCB- Rated V,,., I^O) Emitter-Base Cutoff Current (VH»5.0V.IC=0) VCEOOU*) 'ceo 'ceo IEBO 100 0.5 0.5 0.5 0.5 200 2.0 V mA uA mA ON CHARACTERISTICS (1) DC Current Gain (IC-3.0A,VOI-3,OV) Collector-Emitter Saturation Voltag (IC«3.0A, I,- 12mA) Base-Emitter Saturation Voltage (IC=3.0A, IB= 12mA) Diode Forward-Voltage (IF=3.0A) hFE VcE,-q VBE(«M) VF 750 2.0 2.5 2.5 V V V (1) Pulse Test Pulse Width =300 us, Duty Cycle £ 2.0% INTERNAL SCHEMATIC DIAGRAM BDX54 Series PNP L