BDX53F NJSEMI | Alldatasheet
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Technical content
E,i!>.£,ii Lr1 redacts., One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDX53F
DESCRIPTION
- Collector Current -lc= 8A
- High DC Current Gain- : hFE= 500(Min)@ lc= 2A
- Complement to Type BDX54F
APPLICATIONS
- Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25x:) SYMBOL VCER VCEO VEBO Ic ICM le PC Tj Tstg PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE 160 160 0.2 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth J-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.08 UNIT
- c/w 'CM/ PIN 1.BASE 2.COLLECTOR
3 EMITTER
V
- Hh-s i|-U-L Irr soi-
- so* DIM A B C D F G H J K L R S U V mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Darlington Power Transistor BDX53F
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VBE(sat) VECF ICEO ICBO IEBO hpE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= 50mA;lB=0 lc=2A; IB= 10mA lc=2A;la=10mA IF=2A VCE= 80V; IB= 0 VCB=160V;IE=0 VEB= 5V; lc= 0 lc= 2A ; VCE= 5V lc=3A; VOE=5V MIN 160 500 150 TYP. MAX 2.0 2.5 2.5 0.5 0.2 UNIT V V V V mA mA mA