BDX34B NJSEMI | Alldatasheet

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Technical content

'Jzis.su , O ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor BDX34B

DESCRIPTION

  • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -80V(Min)
  • High DC Current Gain ; : hFE= 750(Min) @lc= -3A
  • Low Collector Saturation Voltage : VCE(sa.r -2.5V(Max.)@ lc= -3A
  • Complement to Type BDX33B

APPLICATIONS

  • Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25C) SYMBOL VCBO VCEO VESO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -80 -80 -10 -15 -0.25 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.78 UNIT
  • c/w 1 ./«">. i i PI 1 ' 1 2 2 r ~* 4 N 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package *JPj A"*" » 1 , B "
  • * V >-j_x-- T-Oc * . rj K T i H c "ll*~L G •*-- I DIW A B C D F G H J K L Q R S u V c ~* Sod'' • mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 t Quality Semi-Conductors

Silicon PNP Darlington Power Transistor BDX34B

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VsE(on) ICBO ICEO IEBO PFE PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS lc=-100mA;lB=0 |c= -3A; |B= -6mA |c= -3A; VCE= -3V VGB= -80V; IE= 0 VCE= -40V; IB= 0 VEB= -5V; lc= 0 lc= -3A; VCE= -3V MIN -80 750 TYP, MAX -2.5 -2.5 -0.2 -0.5 -10 UNIT V V V mA mA mA