BDX33C NJSEMI | Alldatasheet
Document overview
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Technical content
, O ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlington Power Transistor BDX33C
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VCEo(sus)= 100V(Min)
- High DC Current Gain ; : hFE= 750(Min) @lc= 3A
- Low Collector Saturation Voltage : VCE(sat)= 2.5V(Max.)@ lc= 3A
- Complement to Type BDX34C
APPLICATIONS
- Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T3=25'C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 100 100 0.25 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.78 UNIT "CM/ PIN 1 2 3- i - • R1 R? 1
1 BASE
- COLLECTOR 3. EMITTER TO-220C package u * f A r J -• v *ii---' rk^tj JO. 00V K — I C it of- DiW A B C D F K J K L Q R S U V ,,.. mm WIN 15.70 9.90 4.20 0.70 3.40 4.9£ 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 r
- [• j Quality Semi-Conductors
Silicon NPN Darlington Power Transistor BDX33C
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat) VeE(on) ICBO IcEO IEBO HFE PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS "lc= 100mA;lB=0 lc= 3A; IB= 6mA lc= 3A; VCE= 3V VCB=100V;IE=0 VCE= 50V; IB= 0 VEB= 5V; lc= 0 lc= 3A; VCE= 3V MIN 100 750 TYP. MAX 2.5 2.5 0.2 0.5 UNIT V V V mA mA mA