BDX20 NJSEMI | Alldatasheet
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Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor BDX20
DESCRIPTION
- High Current Capability
- Collector-Emitter Sustaining Voltage- : VCEo(sus)= -140V(Min)
- High Switching Speed
APPLICATIONS
- Designed for LF large signal power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEX VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage- VBE= 1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25°C Junction Temperature Storage Temperature VALUE -160 -160 -140 -10 117 200 -65-200 UNIT V V V V A A W r THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.5 UNIT °c/w ,*1 V J * S^x 1 PIH l.Bf&E Y^ 2. OIITTER TV 3. COLLECTQR(C AS E) ' TO-3 package t-E ft t t-N-^ 1 J -JU-D: (*— U— H rH X*l ^v ' l(tt N ^•-2—4 PL r y i 9 c j M^i Iran DM* im | A 39( B 25.30 C ?8C D 0.30 E 1.40 MAX n 26.67 8.30 1.10 1.60 5 10,92 H 5.46 Ji 11. « L 1675 N 1940 0 4.00 U 30.00 V 430 1350 17.05 19.62 4.20 3020 450 GH t ; B NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor BDX20
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL VcEO(SUS) VcEX VcE(sat)-i VcE(sat)-2 VsE(on)-1 VBE(on)-2 ICEX ICBO IEBO hpE-1 hpE-2 fj PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current Gain-Bandwidth Product CONDITIONS lc= -200mA; ls= 0 lc= -1 00mA ;VBE= 1.5V lc= -3A; IB= -0.3A IC=-10A;IB=-2A lc= -3A ; VCE= -4V lc=-10A;VcE=-4V VCE= -140V;VBE= 1.5V VCE= -140V;VBE=1.5V,TC= 150'C VCB= -140V; IE= 0 VEB= -7.0V; lc= 0 lc=-3A;VGE=-4V lc=-10A;VCE=-4V lc= -1A;VCE=-10V;f,est= 1.0MHz MIN -140 -160 TYP. -1.7 -5.7 MAX -1.0 -5.0 -1.0 -10 -1.0 -5.0 UNIT V V V V V V mA mA mA MHz