BDX18 NJSEMI | Alldatasheet
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%£ii.£.u ^zmi-donductoi Lpioduati, One. O' t/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDX1S-BDX1SN PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS PNP SIL1CIUM, BASE fPI TAXItE LF large iigrul power impljfiution Amplification Bf grands signaux elf puissanct High currant switching Commutation fort courant . ndwljn Variation de dissipation 100% s \\0 100 ISO TMS.(OC) J c VCEO - TO v IC -ISA Ptot 117 W th(i"c) * C/W nwx h2i£ 14 A) 20 - 70 fy 4 MHz min V ** TO3ICB1B) BOititr ^ ^ ABSOLUTE RATINGS ILIMITING VALUES) VALEURS LiMirESABSouuesD'UTiLisATioN ^OtlKlOr^MH V0lt89« J>ni/on coflKHur-tMM collector-emittir voltage ^Miior) collKteur-imettfur ""Klor-emitttr volugt J^on collKtnr-tmttmir H B E = 1 oo n ul»Kttjr.emitt«r voltaqt .^*=r, cD««»0^m.rr.Ur VBE = + 1 .S V 1 filter -bait voltag* «»Ktor current f-S^"' co/ltcmir -» current u^-t/uftas* J"* duumtion
- >»Mr/o/, a, PU/B.OM "oiieZS C ^UI*ge and junction temperature max '""Otorurt 40 ionction « a* uockagt VCBO VCEO VCER VCEX VEBO ic Ptot T«9 BOX 11 -100 -60 -70 -90 -15 117 20U -65+200 BOX IB N -7« -80 -8B -70 -15 ^ -7 117 -66+200 V V V V V A A W J ctian-ciM thffm.il rttittinc* l)"»V»ruf» thermiqu* junction boititr m"1 Rth(j^ct 1,9 °C/W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
<^£,mL-L,onauctoi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BOX 18, BOX 18 N TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES 'e«« = 2B°C (Unlesi otherwise stated! tSfuf indications contrtim) Collector-emitter cut-off current Courint ffiidufl colttctiur-jmtrttur Emitter-base cut-off current Courtnt rtsidufl emttteur-bist Collector-emitter breakdown voltage Tension dt cliques* coltfcttur-tmtlttut Collector -emitter breakdown voltage Tension at cfoquaga CQttrctvvr-tmttttur Collector-emitter breakdown voltage Tension df c/*4i"#* colltcteurjmelttuf Static forward current transfer ratio Vtteuf satittut ttu rtpport dt trantftrt direct du counnt Collector-emitter saturation voltage Tension df svturftion cotltcttur-emeltfur Base-emitter voltage Ttntion bnt-tmftttvr Test conditions Cont/mom d» mnun VCE =-90V VBE = -H.5V Vc£ = -60 V VBE = +1.5V 'cas.-150"0 VCE = -™v VBE=+1,5V VC£ = -60V VBE = 41,5V tc«,= 150°C VEB=-7V 'c -o lc = 200 mA 'B =° lc = 200 mA 'B =« Ij, = -200 mA RBE = 10on lc = -200 mA RBE = 100 n lc = -100mA VBE = +1.5V lc = -100mA VBE- + 1.6V VCE = -4V lc =-4 A lc =-4 A IB =-0,4A VCE = -4V lc =-4 A 'EBO vceoisus) VCER(SUI)* vrcv, ,* "21 E* VCESat* VBE* BOX 18 BOX 18 BOX 18 N BOX 18N BOX 18 BOX 18 N BOX 18 BOX 18 N BOX 18 BOX 18 N Min. Typ. Max. -10 -10 -60 -60 -70 -65 -90 -70 20 70 -1,1 -1,8 mA mA mA mA mA V V V V V V V V Base-emitter voltage "CE ~~ Ttniion bfn-tfn-rtttur | . = -4 A u * Pulsed t «300^s 6 <2 fmpultton* p Transition frequency Frequent* dt trtnsition Test conditions Condition* dt mttun cCE - -' A f = 1 MHz VBE* -1,8 Min. Typ. Max. MHz Quality Semi-Conductors