BDX16 NJSEMI | Alldatasheet
Document overview
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Technical content
, iJ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDX16
DESCRIPTION
- Contunuous Collector Current-lc= -3A
- Collector Power Dissipation- : Pc= 25W @TC= 25 °C Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min)
APPLICATIONS
- Designed for use in general purpose switching and linear amplifier applications requiring high breakdown voltages. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCER VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE= 100Q Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation@Tc=25"C Junction Temperature Storage Temperature VALUE -160 -150 -140 200 -65-200 UNIT V V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 7.0 UNIT
- c/w PIN X .BASE 2. BullTTER 3. COLLECT OR (CASE) TO-66 package ( f H t « A L « — X l" • !>•- DIM A B c D E H K L N Q v v I
- IU-D -U— * /t»S 9-— « ® ^s 1 i \\1 c r / \\ c _ga unit Mm 31.40 17 JO 6.70 0.70 1.40 MAX 31^0 17.70 7.10 0.90 1.60 5,03 2.54 9.80 14.70 12.40 3.60 24.10 XSO 10.20 14.90 12.60 3.80 2430 ^^0 sa t \\J Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor BDX16
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified SYMBOL V(BR)CEO V(BR)CER V(BR)CEX VcE(sat) VBE(on) ICEX IEBO HFE fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product CONDITIONS lc=-100mA;lB=0 lc= -100mA; RBE=100Q lc= -1 00mA; VBE= 1.5V lc= -0.5A; IB= -50mA lc= -0.5A; VCE= -4V VCE= -140V;VBE= 1.5V VCE= -140V;VBE= 1.5V,TC=150X: VEB= -7V; lc= 0 lc= -0.5A; VCE= -4V lc=-0.2A;VCE=-10V MIN -140 -150 -160 TYP. MAX -1.0 -1.7 -1.0 -5.0 -1.0 UNIT V V V V V mA mA MHz