BDX14AA SEME-LAB | Alldatasheet
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- 90V - 55V - 60V - 90V -7V -4V -2V 29W 200°C –65 to 200°C 6°C / W BDX14A A Prelim. 02/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. PNP SILICON TRANSISTOR, EPITAXIAL BASE FEATURES: LF Large Signal Power Amplification Medium Current Switching VCBO Collector – Base Voltage (Open Emitter) VCEO Collector – Emitter Voltage (Open Base) VCER Collector – Emitter Voltage RBE =100/G57 VCEX Collector – Base Voltage VBE = +1.5V VEBO Emitter – Base Voltage IC Collector Current IB Base Current Ptot Power Dissipation TJ Maximum Junction Temperature TSTG Storage Temperature R th-(j-c) Junction to Case. MECHANICAL DATA Dimensions in mm ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) 24.33 (0.958) 24.43 (0.962) 14.48 (0.570) 14.99 (0.590) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 0.71 (0.028) 0.86 (0.034) 1.27 (0.050) 1.91 (0.750) 9.14 (0.360) min. 4.83 (0.190) 5.33 (0.210) 6.35 (0.250) 8.64 (0.340) 11.94 (0.470) 12.70 (0.500) Pin 1 – Base Pin 2 – Emitter Case - Collector
Parameter Test Conditions Min. Typ. Max. Unit BDX14A A Prelim. 02/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. mA V V V V MHz -55 -60 25 250 -1.7 I CEX VCEO(SUS)* VCER(SUS)* V(BR)EBO* h21E* VCE(sat)* VBE* fT Collector Emitter Cut Off Current Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Static Forward Current Transfer Ratio Collector Emitter Saturation Voltage Base Emitter Voltage Transition Frequency VCE = -90V V BE = +1.5V VCE = -30V V BE = +1.5V Tcase = 150°C IC = -100mA I B = 0 IC = -100mA R BE = 100/G57 IE = -1A I C =0 VCE = - 4V I C = - 0.5A IC = - 0.5A I B = - 0.05A VCE = - 4V I C = - 0.5A VCB = -10V I C = - 0.2A f = 1MHz ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) * Pulse test tp = 300/G6D s , /G64 < 2%