BDX14 NJSEMI | Alldatasheet

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Technical content

, O ne. 20 STERN AVE. TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 Silicon PNP Power Transistor BDX1 4

DESCRIPTION

  • Continuous Collector Current-lc= -4A
  • Collector-Emitter Sustaining Voltage- : VCEo(sus)= -55V(Mm.)

APPLICATIONS

  • Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=251 ) SYMBOL VCBO VCER VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE- 100 Q Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@Tc=25°C Junction Temperature Storage Temperature VALUE -90 -60 -55 200 -65-200 UNIT V V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX Thermal Resistance.Junction to Case 6.0 UNIT 'CM/ r PIN 1. BASE LS 2. EMITTER TV 3. COLLECT OR (CASE) ' TO-66 package r — A — i r*-i I i i 1 ! c t-E I [ h— u— | r-n-, i v^^Jy * T 5r-^7l-€ G B t ^s^H^x^ t i M3a imu DIM MM MAX A 31/40 31^0 B 17JO 17.70 C 6.70 7.10 D 0.70 0,90 E 1.40 1.60 G 5.03 H 2.54 K 9.80 10-20 L 14.70 14.90 N 12.40 12.60 .Q 3J60 JjgO U 24M 24.50 V 3^0 ^.70 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Power Transistor BDX14

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcER(SUS) V(BR)EBO VcE(sat) VBE(on) ICEX hFE fr PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain Current Gain-Bandwidth Product CONDITIONS lc= -100mA; IB= 0 lc=-100mA;RBE=100Q lE=-1mA;lc=0 lc= -0.5A; IB= -50mA lc= -0.5A; VCE= -4V VCE= -90V; VBE= 1.5V VCE= -30V; VBE= 1 .5V,TC=150'C IG= -0.5A; VCE= -4V lc=-0.2A;VCE=-10V WIN -55 -60 MAX -1.0 -1.7 -1.0 -5.0 100 UNIT V V V V V mA MHz