BDW45 NJSEMI | Alldatasheet
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Technical content
J , O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDW45
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VCECKSUSP -60V(Min)
- High DC Current Gain : hFE= 1000(Min)@lc=-5A
- Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max.)@ lc= -5.0A = -3.0V(Max.)@lc=-10A
- Complement to Type BDW40
APPLICATIONS
- Designed for general purpose and low speed switching
ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE -60 -60 -15 -0.5 150 -55-1 50 UNIT V V V A A W r THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 1.47 UNIT °c/w 1 .*> TV Ir 1. 1 2 P f PI t |St J— - 3 N 1 BASE 2.COLLECTOR 3. EMITTER TO-220C package rt i.. A : ' 4 H I y~ K i c r;7i kin MM**. He t K f DIM A B C D F G H J K L Q R S U V soi-.. mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 rs _ ^ s/°° NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Darlington Power Transistor BDW45
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-1 VcE(sat)-2 VsE(on) ICBO ICEO IEBO hpE-1 hFE-2 fr COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= -30mA; IB= 0 |c=-5A;lB=-10mA lc=-10A; lB=-50mA lc= -1 OA ; VCE= -4V VCB= -60V; IE= 0 VCE= -30V; IB= 0 VEB= -5V; lc= 0 lc=-5A;VcE=-4V lc=-10A;VGE=-4V lc= -3A; VCE= -3V; f,est= 1MHz lE=0;VcB=-10V;ftest=0.1MHz MIN -60 1000 250 TYP. MAX -2.0 -3.0 -3.0 -1.0 -2.0 -2.0 300 UNIT V V V V mA mA mA MHz pF