BDW44 NJSEMI | Alldatasheet
Document overview
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Technical content
<_/ , Lt nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDW44
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VCECXSUSP -45V(Min)
- High DC Current Gain : hFE=1000(Min)@lc=-5A
- Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max.)@ lc= -5.0A = -3.0V(Max.)@lc=-10A
- Complement to Type BDW39
APPLICATIONS
- Designed for general purpose and low speed switching
ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO IG IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -45 -45 -15 -0.5 150 -55-150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.47 UNIT -c/w w .a " 1 2 3 -VW' ' ' • »W 1— R- ^r^ N 1 BASE 2.COLLECTOR 3.B/HTTER TO-220C package ''To" Jy A f i w f H ' '< 7 K C ;57l- -ert «?JV I DIM A B C D F G H J K L Q R S U V r "* mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2-70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 Bv00 Rr*- NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Darlington Power Transistor BDW44
ELECTRICAL CHARACTERISTICS
Tc=25"C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-i VcE(sat)-2 VBE(on) ICBO ICEO IEBO hpE-1 hpE-2 ft COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage ' Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= -30mA; IB= 0 lc=-5A;lB=-10mA lc= -1 OA; IB= -50mA lc=-10A;VCE=-4V VCB= -45V; le= 0 VCE= -22.5V; IB= 0 VEB= -5V; lc= 0 lc= -5A ; VCE= -4V IG=-10A;VCE=-4V lc= -3A; Vce= -3V; ftest= 1MHz l6=0;VcB= -10V; ftest= 0.1MHz MIN -45 1000 250 TYP. MAX -2.0 -3.0 -3.0 -1.0 -2.0 -2.0 300 UNIT V V V V mA mA mA MHz pF