BDW43 NJSEMI | Alldatasheet

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Technical content

\\-S , O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDW43

DESCRIPTION

  • Collector-Emitter Sustaining Voltage- :VCEO(sus)=120V(Min)
  • High DC Current Gain : hFE=1000(Min)@lc=5A
  • Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ lc= 5.0A = 3.0V(Max.)@lc=10A
  • Complement to Type BDW48

APPLICATIONS

  • Designed for general purpose and low speed

ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VOBO VCEO VEBO Ic IB PC Tj TS|g PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range switching VALUE 120 120 0.5 150 -55-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case UNIT V V V A A W MAX 1.47 UNIT °c/w i PIN 111 1 2 3 s - 1.BASE 2. COLLECTOR 3. BETTER TO-220C package ffoj i x y A K I i Tl i *— B— H +i :K3fc -*j G h

  • 1 DIM A B C D F G H J K L Q R S U V soi- • H mm MIN 15.70 d.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — 1506-
  • [— J ! "*- NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon NPN Darlington Power Transistor BDW43

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-! VcE(sat)-2 VBE(OR) ICBO ICEO IEBO hpE-1 hFE-2 fi COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= 30mA; IB= 0 lc=5A;lB=10mA lc= 10A;lB=50mA lc=10A;VCE=4V VCB=120V;IE=0 VCE= 60V; IB= 0 VEB= 5V; lc= 0 lc= 5A; VCE= 4V lc=10A;VCE=4V lc=3A;VcE=3V;ftest=1MHz IE= 0; VCB= 10V; f,es,= 0.1MHz MIN 120 1000 250 TYP. MAX 2.0 3.0 3.0 1.0 2.0 2.0 200 UNIT V V V V mA mA mA MHz pF