BDW40 NJSEMI | Alldatasheet
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Technical content
<^7V£ <=£ £ini-L.onau(2toi , O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDW40
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VCEo(sus)= 60V(Min)
- High DC Current Gain : hFE=1000(Min)@lc=5A
- Low Collector Saturation Voltage : VcE<sat)= 2.0V(Max.)@ lc= 5.0A = 3.0V(Max.)@lc=10A
- Complement to Type BDW45
APPLICATIONS
- Designed for general purpose and low speed
ABSOLUTE MAXIMUM RATINGS(Ta=25T) SYMBOL VCBO VCEO VEBO Ic Is PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range switch ir VALUE 0.5 150 -55-150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case ig UNIT V V V A A W MAX 1.47 UNIT 'CM/ i <•> ' ) PIN ia 1 2 3 H<_jr — nVV— - i— /yV 4 1 R1 ^ 1.BASE 1. COLLECTOR 3.aHITTER TO-220C package | " f A I i |j- W * H ' K I , : H C :?qu -e/E G L*- j HIM A B C D F G H K L Q R s U V F ~* soi'' mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 ~ TSOft- NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. Hovvever, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Darlington Power Transistor BDW40
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-1 VcE(sat)-2 VsE(on) Iceo ICEO IEBO hpE-1 hpE-2 fr COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= 30mA; IB= 0 lc= 5A; IB= 10rnA lc=10A;lB=50mA lc= 10A; VCE=4V VCB= 60V; IE= 0 VCE= 30V; la= 0 VEB= 5V; lc= 0 lc= 5A; VCE= 4V lc=10A;VCE=4V lc=3A;VCE=3V;ftest=1MHz lE=0;VCB=10V;ftest= 0.1MHz MIN 1000 250 TYP. MAX 2.0 3.0 3.0 1.0 2.0 2.0 200 UNIT V V V V mA mA mA MHz PF