BDW36 NJSEMI | Alldatasheet
Document overview
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Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistors TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BDW36
DESCRIPTION
- Collector-Emitter Sustaining Voltage- :VCEO(Sus)=180V(Min)
- High Switching Speed
- Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ lc= 10A
APPLICATIONS
- Designed for use in industrial-military power amplifier and switching circuit applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Tc=25°C Junction Temperature Storage Temperature VALUE 180 180 250 200 -65-200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX 0.875 UNIT "CM/
3 PIN
1 1.BASE 1 — K 2.BWIITTER ^| 3. COLLECT OR (CASE)
2 TO-3 package
t f _.J 1 C t II ' 0 i — *^U-D I PL /4K / , V^^x1' ( M3B mm DM MM MAX A 3900 B 25.30 26.6? C 7.80 8.30 0 1.«0 T.60 £ t.40 1.SO 0 1092 H 546 K 11.40 13.50 L 16.75 17.05 N 1940 19.62 Q 4.00 420 U 30.00 3020 V 4.30 450 t-K -pgg - t = B ' I NJ Semi-Conductors reserves the right to change test conditions, parameter limits and paekage dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistors BDW36
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcEO(SUS) VcE(sat)-1 VcE(sal)-2 VeE(sat)-i VeE(on) ICEO ICBO IEBO ripE-1 hfE-2 ft PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage .-. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= 50mA; IB= 0 IC=10A;IB=1A lc= 30A; IB= 6A lc= 10A; IB= 1A IC=10A;VCE=4V VCE= 90V; IB= 0 VCB=180V;IE=0 VEB= 6V; lc= 0 lc= 8A; VCE= 4V lc= 30A; VCE= 4V lc=1A; VCE= 10V MIN 150 MAX 1.0 3.0 1.8 1.8 0.1 100 UNIT V V V V V uA uA mA MHz