BDW25 SIEMENS | Alldatasheet
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25C D MM 6235605 0004433 T MMSIEG 7-33-07 i NPN Silicon Planar Transistors BDW 25 i BDY 12 2 SIEMENS AKTIENGESELLSCHAF “433. 2-———_~ BDY 13 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in . SOT 9 case (9 A 2 DIN 41875). The collector is electrically connected to the case. ~ In order to ensure insulated fixing of the transistors on the chassis, a mica washer, { each, and two insulating nipples are provided for. These have to be ordered separately. 1 The transistors are particularly suitable for use in high Q.AF output stages and as switches. i Type Ordering code ot 8 ois? 042°) BDW 25 062702-D378 Kt ect y BDW 25-4 — |Q62702-D378-V4 9. & KoX 233 gn BDW 25-6 — |Q62702-D378-v2 = Teer 8 z eeT 8 g i BDY 12 060204-Y12 “| v| : Boy 12-6 |ae0204-Y12-8 rw Ml BDY 12-10 |@60204-Y12-C ia of 1880, ns : BDY 12-16 |Q60204-Y12-D : BDY 13 Q60204-Y13 Approx. weight 8.3 g Dimensions inmm Mica washer . BDY 13-6 060204-Y13-B Oa Reet LW i BDY 13-10 Q60204-Y13-C . BDY 13-16 |Q60204-Y13-D i Mica washer |Q62901-B16-A : Insulating nipple Q62901-B13-C i Maximum ratings BDW 28| BDY 12 | BDY 13 Collector emitter voltage Veo 126 40 60 v : Collector-base voltage Veao | 130 60 80 v Emitter-base voltage Veeo 5 5 5 v . Collector current Ic 5 5 5 A Emitter current Ie 3.5 - - A . Emitter peak current") Tens 6 - - A - Base current Ig 0.6 0.3 0.3 A Base peak current" Tem 1 - - A Junction temperature jj 175 176 175 °c : Storage temperature range Tatg ~65 to +126 °c : Total power dissipation (Tease = 45 °C; Vee < 13 V) Prot 26 26 26 w Thermal resistance Junction to ambient air Rina S85 $85 $85 Kw ° Junction to case Ric | 85 55 55 Kw 1¥2 10 tp; tp $ 10 ns 479 1856 6-03
25C D m™ 6235605 0004434 1 MMSIEG —t 25C 04434 OD BDW 25 BDY 12 SIEMENS AKTIENGESELLSCHAF 7~33-097 —spY 13 : Static characteristics (Tcase = 25°C) The transistors BDW 25, BDY 12, and BDY 13 are grouped according to the DC current gain hee at Ic = 1A, Vce = 1 V, and marked by numerals of the German DIN-R-5 standard. For the conditions stated below, the following data applies: Type Bow2s | spw25 BDW 25 BDY 12, BDY 13 BDY 12, BDY 13} BDY 12 meoroop [4 fe to ftw : Vee | Ic | fee fee hee hee Vee Vv A | Ill Tella Telly Ie/le v 1 [oar [aseie [ss rs [ao 1 40 63 100 160 <1.2° (25 to 60) {40 to 100) | (63 to 160) | (100 to 250) Static characteristics (Tcase = 25°C) BDW 25 | BDY12 | BDY13 Collectot-emitter saturation voltage (Ic = 3A; Ig = 0.3 A) Voesst | <1 <1 <1 v Base-emitter saturation voltage Collector cutoff current (Voce = 80 V) Tees <1 - - HA Collector cutoff current - (Vee = 80 V, Temp = 125°C) lees <400. | - - HA . Collector cutoff current - (ees = 40 V) Toes - <1 - pA Collector cutoff current (ees = 40 V; Tamb = 125°C) Tees - <400 - pA Collector cutoff current . (Voces = 60 V) Tees - - <1 HA Collector cutoff current (ees = 60 V: Tams = 125°C) Tees - - <400 | uA Emitter cutoff current (Vego = 4V) Tewo (| <1 <1 <1 WA . *AQL = 0.65% 480 — : 1857 6-04
~ esc Dd MB 4235605 ooo443s 3 MESIEG j we _25C 04435 0 BDW 25 | a BDY 12 : SIEMENS AKTIENGESELLSCHAF — 7-33-09 —BDY 13 i Static characteristics (Tease = 26°C) BDW 25 | BDY 12 | BDY 13 i Collector emitter breakdown voltage H (Ic = 50 mA) Verjceo |>128 |>40 |>60 |v i (Pulse width 200 us, duty cycle 1%) | Collector base breakdown voltage | (lc = 100 uA) Verceo |>130 |>60 |>80 |v ! Emitter base breakdown voltage ; : ca Ue = 10 nA) Viereso | >5 >6 >5 Vv : Dynamic characteristics (Tam = 25°C) 8 Transition frequency 3 (c= 200mA; Vee =10V;f=20MHz) fy >30 | 70(>30)| 70(>30)] MHz i Collector base capacitance : Switching times : (c= 1A;a1approx.—la2epprox.60mA) — ton <03 |<03 |<03 |us tott <16 <15 <15 us (J¢=2A; Igy approx.—Ig2approx.200mA) ton <0s = |- - us i tort <2 - - us : ts <1 - - us : Test circuit for switching times [| lone [] 202 * if ; mi oP iv — . oe : [|wo A aaves 481
1858 G-05
_ 25C D MM B235b05 OOO44 5 MMSIEG .. KE Z3-9 a 25C 04436 OD BDW 25 SIEMENS AKTIENGESELLSCHAF ——HW¥——— BY 2 ‘Total perm. power dissipation Total perm. power dissipation voreus tompertare Yorud tompereture Pre F (Tease: Vee = parameter Piet = # (Tease): Vox = parameter w BoY12 w BDY13 . "CCL “CCC TTT Fo [Voed ov | TT TT | Prot (Need oT TT TT | . f FREER } FSReEEEcEr LPIA TTT Ty LTE : ae NCCC eA: Pree Ty Lf TTX TTT ey : SRE {fav PINT TT | fav | PAT TT PTT TTA TTT TT TTA Ty | [ov TTA TT toot TEA TT TT wo EAT TTY ar Fro Ty Siaenee Eee EERE EEA S0S==>> enn eee PAT SRN ; PET rT Tr ry PPT rrr ry : go LETT TTIW I o LETT TN I . “0 m0 morc 0 100 200°C : —rhea —+Tese i tonne - remap nd Proe =f (Teasali Vox = parameter - Kk. "ouc = #(0; v= parameter w Bow25 W BDW 25 . HENGE EEE Lee AMT ETT) fe EER si EEN EEE ee 7/AN Ha ENE EEE Rgieieger/ dsliaastiemtinati { sh Ee ile) dat ioat eat oat 5 ee ee Rear Cie i Hol ERE EEA 7A i m2 a Sy H ae a a AH All Il i Lfor FEN EY Oe ti FH 1 =e 5 CAH tot : aT BaHH HH : — ee et et oe CAM cil 2 ceteeeeeee. NN 0 100 20°C w® 8 wt wo? 0? 07 ms lan —! : 482 = noe ee . : 1859 6-06
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SIEMENS AKTIENGESELLSCHAF ———————— Boy 13 Permissible pulse load DC current gain hee = f (lc) } fouc =f (0; v= parameter Vee =1V; Tease = parameter 1 t BDY 12, BDY 13 v BOW 25-6, BDY 12-6, BDY 13-6 i
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25C ) MM 4235605 0004439 O mMSIEG a ~ 33-0
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Collector-emitter saturation voltage. Bese-emitter saturation voltage a Voesat =f (lc) Veesat = f Uc) ee = 10; Toss = parameter ‘hee = 10; Tease = parameter: > {common emitter configuration) (common emitter configuration) x m __BDY 12, BDY 13 BY BDY 12, BDY 13 a . EERE EEE EEEEEEEES Ae eee OD
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Hees im CeCe | a aT Co lll | eo LUT O OF Q2 03 Of 05 O6 OF GeV 0 gs wv iY | —Veesat Veet | Collector cutotf current versus \\ fompereture : Town Tas] or maximum Fatriauietevrse volage, mm” BDY 12, BDY 13 . 7 . | wo , eo eeeeSeeneaeel FREE EEEEZEEEEH wa : wi lela CPPCC = wlZO a | - eCODOCOTTAee 0 50 10 werG Tas 1862 6-09 4 486