BDW23 NJSEMI | Alldatasheet
Document overview
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Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlington Power Transistor BDW23/A/B/C
DESCRIPTION
- Collector Current -lc= 6A
- High DC Current Gain-hFE= 750(Min)@ lc= 2A
- Complement to Type BDW24/A/B/C
APPLICATIONS
- Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25x:) SYMBOL VCER VOEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage BDW23 BDW23A BDW23B BDW23C BDW23 BDW23A BDW23B BDW23C Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25-C Junction Temperature Storage Temperature Range VALUE 100 100 0.2 150 -65-150 UNIT V V V A A A W r r 1 .-*> ' i I I PIN l.l 1 2 3 "1 ^ V*V L->'vV 1 1 R1 R2
- !> 3 1. BASE 2. COLLECTOR 3. EMITTER TO-220C package I ifr A r;ru J-€A M.QOV I H 1 :j K t J
- , H f C 1 ^ftJ-KL' t U DIM A B C D F G H J K L Q R S u V mm WIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — BOO' t NJ Semi-Conductors reserves the right to ehange test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Darlington Power Transistor BDW23/A/B/C
ELECTRICAL CHARACTERISTICS
TC=2S'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat)-1 VcE(sat)-2 VBE(sat) VeE(on)-1 VsE(on)-2 VECF ICEO ICBO IEBO |"IFE-I hFE-2 hpE-3 PARAMETER Collector-Emitter Breakdown Voltage BDW23 BDW23A BDW23B; BDW23C Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current BDW23 BDW23A BDW23B BDW23C BDW23 BDW23A BDW23B BDW23C Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS i~— mrimA u— n lc= 2A; IB= 8mA lc= 6A; IB= 60mA IG= 2A; IB= 8mA lc=1A; VCE=3V lc=6A;VCE=3V IF=2A VCE= 22V; IB= 0 VCE= 30V; IB= 0 VCE= 40V; IB= 0 VCE= 50V; IB= 0 VCB= 45V;IE= 0 VCB= 60V;IE= 0 VCB= 80V;IE= 0 VCB=100V;IE=0 VEB= 5V; lc=0 lc=1A; VCE=3V lc= 2A ; VCE= 3V lc= 6A ; VGE= 3V MIN 100 1000 750 100 TYP. MAX 2.5 2.5 1.8 0.5 0.2 20000 UNIT V V V V V V V mA mA mA